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首页> 外文期刊>Journal of Applied Physics >Challenges in the stoichiometric growth of polycrystalline and epitaxial PbZr_(0.52)Ti_(0.48)O_3/La_(0.7)Sr_(0.3)MnO_3 multiferroic heterostructures using pulsed laser deposition
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Challenges in the stoichiometric growth of polycrystalline and epitaxial PbZr_(0.52)Ti_(0.48)O_3/La_(0.7)Sr_(0.3)MnO_3 multiferroic heterostructures using pulsed laser deposition

机译:多晶异质结构和外延PbZr_(0.52)Ti_(0.48)O_3 / La_(0.7)Sr_(0.3)MnO_3多铁异质结构化学计量增长的挑战

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摘要

High quality polycrystalline and epitaxial PbZr_(0.52)Ti_(0.48)O_3/La_(0.7)Sr_(0.3)MnO_3 (PZT/LSMO) multiferroic thin films were deposited on single-crystal Si (100) and SrTiO_3 (STO) (100) substrates using pulsed laser deposition (PLD) technique. The deposition conditions were optimized to overcome some of the challenges during the growth of stoichiometric PZT/LSMO thin films (with LSMO as the bottom layers). The major setback of the preferential evaporation of Pb during the ablation of PZT target, which leads to the growth of non-stoichiometric, Pb-deficient PZT thin films with poor ferroelectric properties, was investigated by studying the laser-target interaction sites and intensified charge-coupled detector (ICCD) imaging of the laser-ablated plumes. X-ray studies revealed that the PZT/LSMO heterostructures deposited under the optimum conditions were highly crystalline. Atomic force microscope images showed uniform grain growth with surface roughness values as low as 1.6 nm. In- and out-of-plane magnetization measurements showed saturation of 263-310 emu/cm~3 and the corresponding absence or presence of magnetic anisotropy in the PZT/LSMO heterostructures on Si and STO substrates, respectively. LSMO/PZT/LSMO capacitors showed high remnant polarizations of 25-44 μC/cm~2 at coercive fields of ~30kV/cm. A comparative study was performed on the strained epitaxial PZT/LSMO films on STO substrates and the un-strained polycrystalline PZT/LSMO films on Si substrates.
机译:在单晶Si(100)和SrTiO_3(STO)(100)上沉积高质量多晶和外延PbZr_(0.52)Ti_(0.48)O_3 / La_(0.7)Sr_(0.3)MnO_3(PZT / LSMO)多铁性薄膜基板使用脉冲激光沉积(PLD)技术。优化沉积条件以克服化学计量PZT / LSMO薄膜(以LSMO为底层)生长过程中的一些挑战。通过研究激光-靶相互作用部位和增强电荷,研究了PZT靶烧蚀过程中Pb优先蒸发的主要挫折,这导致了非化学计量的,Pb缺陷的铁电性能差的PZT薄膜的生长。烧蚀烟羽的红外耦合检测器(ICCD)成像。 X射线研究表明,在最佳条件下沉积的PZT / LSMO异质结构是高度结晶的。原子力显微镜图像显示晶粒均匀生长,表面粗糙度值低至1.6 nm。平面内和平面外磁化强度测量结果分别为263-310 emu / cm〜3饱和度和相应的在Si和STO衬底上的PZT / LSMO异质结构中不存在或存在磁各向异性。 LSMO / PZT / LSMO电容器在〜30kV / cm的矫顽场中显示出25-44μC/ cm〜2的高剩余极化率。对STO衬底上的应变外延PZT / LSMO膜和Si衬底上的非应变多晶PZT / LSMO膜进行了比较研究。

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  • 来源
    《Journal of Applied Physics》 |2012年第6期|p.064101.1-064101.8|共8页
  • 作者单位

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

    Department of Physics and Center for Integrated Functional Materials (CIFM), University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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