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首页> 外文期刊>Journal of Applied Physics >Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AIGaAs/GaAsP-AIGaAs laser diode structures: Numerical calculations and experimental results
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Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AIGaAs/GaAsP-AIGaAs laser diode structures: Numerical calculations and experimental results

机译：单轴应力对拉伸应变p-AIGaAs / GaAsP / n-AIGaAs激光二极管结构中电致发光，价带修饰，光学增益和偏振模的影响：数值计算和实验结果

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摘要

The effects of uniaxial compression in [110] direction on energy-band structures, heavy and light hole mixing, optical matrix elements, and gain in laser diodes with "light hole up" configuration of valence band levels in GaAsP quantum wells with different widths and phosphorus contents are numerically calculated. The development of light and heavy hole mixing caused by symmetry lowering and converging behavior of light and heavy hole levels in such quantum wells under uniaxial compression is displayed. The light or heavy hole nature of each level is established for all considered values of uniaxial stress. The results of optical gain calculations for TM and TE polarization modes show that uniaxial compression leads to a significant increase of the TE mode and a minor decrease of the TM mode. Electroluminescence experiments were performed under uniaxial compression up to 5 kbar at 77 K on a model laser diode structure (p-Al_xGa_(1-x)As/ GaAs_(1-y)P_y-Al_xGa_(1-x)As) with y = 0.16 and a quantum well width of 14nm. They reveal a maximum blue shift of 27 meV of the electroluminescence spectra that is well described by the calculated change of the optical gap and the increase of the intensity being referred to a TE mode enhancement. Numerical calculations and electroluminescence data indicate that uniaxial compression may be used for a moderate wavelength and TM/TE intensity ratio tuning.
机译：[110]方向上的单轴压缩对具有不同宽度和宽度的GaAsP量子阱中价带能级的“轻空穴向上”配置的能带结构，重空穴和轻空穴混合，光学矩阵元素和增益的影响。磷含量通过数值计算。显示了在单轴压缩下这种量子阱中轻和重空穴能级的对称降低和会聚行为引起的轻和重空穴混合的发展。对于所有考虑的单轴应力值，确定每个级别的轻或重孔性质。 TM和TE偏振模式的光学增益计算结果表明，单轴压缩会导致TE模式显着增加，而TM模式则略有下降。电致发光实验是在模型激光二极管结构（p-Al_xGa_（1-x）As / GaAs_（1-y）P_y / n-Al_xGa_（1-x）As）上于77 K的单轴压缩下进行的，直至5 kbar y = 0.16，量子阱宽度为14nm。它们揭示了电致发光光谱的27 meV的最大蓝移，这可以通过计算出的光学间隙变化和强度增加来很好地描述，这被称为TE模式增强。数值计算和电致发光数据表明，单轴压缩可用于中等波长和TM / TE强度比调整。

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  • 来源
    《Journal of Applied Physics》 |2012年第9期|093113.1-093113.10|共10页
  • 作者

    E. V. Bogdanov; N. Ya. Minina; J. W. Tomm; H. Kissel;

  • 作者单位

    Physics Faculty, M.V. Lomonosov Moscow State University, Moscow 119991, Russia;

    Physics Faculty, M.V. Lomonosov Moscow State University, Moscow 119991, Russia;

    Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany;

    Research and Development Department, DILAS Diodenlaser GmbH, Mainz, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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