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首页> 外文期刊>Journal of Applied Physics >A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the AI_2O_3/ln_0.53Ga_0.47As/lnP system for n-type and p-type ln_0.53Ga_0.47As epitaxial layers
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A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the AI_2O_3/ln_0.53Ga_0.47As/lnP system for n-type and p-type ln_0.53Ga_0.47As epitaxial layers

机译：对n型和p型ln_0.53Ga_0的AI_2O_3 / ln_0.53Ga_0.47As / lnP系统的界面特性进行（NH4）2S钝化（22％，10％，5％或1％）的系统研究.47As外延层

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摘要

In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH_4)_2S concentrations in the passivation of n-type and p-type In_0.53Ga_0.47As. Samples were degreased and immersed in aqueous (NH_4)_2S solutions of concentrations 22%, 10%, 5%, or 1% for 20 min at 295 K, immediately prior to atomic layer deposition of A1_2O_3. Multi-frequency capacitance-voltage (C-V) results on capacitor structures indicate that the lowest frequency dispersion over the bias range examined occurs for ?-type and p-type devices treated with the 10%(NH_4)_2S solution. The deleterious effect on device behavior of increased ambient exposure time after removal from 10%(NH_4)_2S solution is also presented. Estimations of the interface state defect density (Dit) for the optimum 10%(NH_4)_2S passivated In_0.53Ga_0.47As devices extracted using an approximation to the conductance method, and also extracted using the temperature-modified high-low frequency C-V method, indicate that the same defect is present over n-type and p-type devices having an integrated D_it of ～2.5 × 10~12 cm~-22 (±1 × 10~12 cm~-22) with the peak density positioned in the middle of the In_0.53Ga_0.47As band gap at approximately 0.37 eV (±0.03 eV) from the valence band edge. Both methods used for extracting D_it show very good agreement, providing evidence to support that the conductance method can be applied to devices incorporating high-k oxides on In_0.53Ga_0.47As.
机译：在这项工作中，我们提供了对n型和p型In_0.53Ga_0.47As钝化过程中不同硫化铵（NH_4）_2S浓度的有效性进行调查的结果。紧接在原子层沉积A1_2O_3之前，将样品脱脂并浸入295 K浓度为22％，10％，5％或1％的（NH_4）_2S水溶液中20分钟。电容器结构上的多频电容-电压（C-V）结果表明，在用10％（NH_4）_2S溶液处理过的β型和p型器件中，在所检查的偏置范围内出现了最低的频率色散。还提出了从10％（NH_4）_2S溶液中去除后增加环境暴露时间对器件行为的有害影响。最佳10％（NH_4）_2S钝化的In_0.53Ga_0.47As器件的界面态缺陷密度（Dit）的估算是使用电导方法的近似值提取的，并还使用了温度修正的高低频CV方法提取的表示在积分型D_it为〜2.5×10〜12 cm〜-22（±1×10〜12 cm〜-22）且峰值密度位于n的n型和p型器件中存在相同的缺陷。 In_0.53Ga_0.47As带隙的中间距离价带边缘约0.37 eV（±0.03 eV）。两种用于提取D_it的方法都显示出很好的一致性，提供了证据来证明电导方法可以应用于在In_0.53Ga_0.47As上掺入高k氧化物的器件。

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  • 来源
    《Journal of Applied Physics》 |2011年第2期|p.024101.1-024101.10|共10页
  • 作者

    E. 0Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley;

  • 作者单位

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

    School of Physical Sciences and National Centre for Sensor Research, Dublin City University, Glasnevin,Dublin 9, Ireland;

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

    Glebe Scientific Ltd., Newport, County Tipperary, Ireland;

    Department of Physics, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740,Mexico Distrito Federal 07000, Mexico;

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

    School of Physical Sciences and National Centre for Sensor Research, Dublin City University, Glasnevin,Dublin 9, Ireland;

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

    Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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