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首页> 外文期刊>Journal of Applied Physics >Complementary metal-oxide semiconductor-compatible detector materialswith enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)
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Complementary metal-oxide semiconductor-compatible detector materialswith enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

机译：通过Ge / Si（100）的Sn掺杂增强了1550 nm响应度的互补金属氧化物半导体兼容探测器材料

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摘要

Previously developed methods used to grow Ge_(1-y)Sn_y alloys on Si are extended to Sn concentrations in the 10~(19)—10~(20) cm~(-3) range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370-390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15-30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 x 10~(20) cm~(-3) Sn range demonstrates the responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge_(1-y)Sn_y, alloys with y = 0.02.
机译：以前开发的用于在Si上生长Ge_（1-y）Sn_y合金的方法扩展到10〜（19）-10〜（20）cm〜（-3）范围内的Sn浓度。这些浓度已显示足以使工作在1550 nm的检测器的响应度大大提高。 Sn的掺杂水平在370-390°C的范围内掺入，以15-30 nm / min的高生长速度产生原子上光滑的层，没有螺纹缺陷。这些条件与互补金属氧化物半导体工艺相比，比通过在纯Ge上的纯Ge中通过拉伸应变实现相同的响应度所需的高生长和工艺温度更具兼容性。对基于具有0.25％（1.1 x 10〜（20）cm〜（-3）Sn范围的Sn掺杂Ge层的探测器的详细研究表明，与以前基于Ge_制成的探测器相比，其响应度得到了增强，并具有更好的IV特性。 （1-y）Sn_y，y = 0.02的合金。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.223-231|共9页
  • 作者

    Radek Roucka; Richard Beeler; Jay Mathews; Mee-Yi Ryu; Yung Kee Yeo; José Menéndez; John Kouvetakis;

  • 作者单位

    Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;

    Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;

    Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;

    Department of Physics, Kangwon National University, Chuncheon, Kangwon-Do 200-701, Korea;

    Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson AFB,Ohio 45433, USA;

    Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;

    Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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