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首页> 外文期刊>Journal of Applied Physics >Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells
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Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells

机译：高掺杂和补偿的太阳能级硅晶片和太阳能电池的电子性能

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摘要

Compensation effects are intensively studied on two highly doped ingots grown from solar-grade silicon feedstocks purified using metallurgical routes, through a comparison of the electrical properties at iso-carrier densities. Working at given carrier densities enables a clearer extraction of the compensation effects, at the wafer and solar cell levels. At the wafer level, the majority carrier mobility and the carrier lifetime are investigated. Regarding the mobilities, it was found that current models may underestimate the amount of incomplete ionization of boron leading to underestimated mobilities. In addition, the majority carrier mobility was found to be strongly affected at high compensation level. Regarding the carrier lifetimes, our results show that after a phosphorus diffusion step, dopants alone — and especially boron — can limit the lifetime in highly doped solar-grade silicon. At the cell level, Ⅰ-Ⅴ characteristics under standard illumination were studied. In particular, the observed reductions in short-circuit current on solar cells having a very high compensation level could be explained in terms of a compensation-induced reduction in the minority carrier mobility. We also report high conversion efficiencies of up to 15.9% on solar cells showing a boron content greater than two ppmw (2.6 x 1017 cm-(~3)), which is generally considered unsuitable for solar cell manufacturing.
机译：通过比较在等载流子密度下的电性能，对用冶金法提纯的太阳能级硅原料生产的两种高掺杂硅锭的补偿效果进行了深入研究。在给定的载流子密度下工作，可以在晶圆和太阳能电池级别上更清晰地提取补偿效果。在晶片级，研究了大多数载流子迁移率和载流子寿命。关于迁移率，发现当前模型可能低估了导致迁移率低估的硼不完全电离的量。此外，发现大多数载波迁移率在高补偿水平下受到严重影响。关于载流子寿命，我们的结果表明，在磷扩散步骤之后，仅掺杂物（尤其是硼）会限制高掺杂太阳能级硅的寿命。在细胞水平上，研究了标准光照下的Ⅰ-Ⅴ特性。特别地，可以用补偿引起的少数载流子迁移率的降低来解释观察到的在具有非常高的补偿水平的太阳能电池上的短路电流的降低。我们还报告说，太阳能电池中的硼含量大于2 ppmw（2.6 x 1017 cm-（〜3）），转换效率高达15.9％，这通常被认为不适合太阳能电池制造。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.566-575|共10页
  • 作者

    J. Veirman; S. Dubois; N. Enjalbert; J.-P. Garandet; M. Lemiti;

  • 作者单位

    CEA, LITEN, INES, 50 av du Lac Léman, F-73377, Le Bourget du Lac, France;

    CEA, LITEN, INES, 50 av du Lac Léman, F-73377, Le Bourget du Lac, France;

    CEA, LITEN, INES, 50 av du Lac Léman, F-73377, Le Bourget du Lac, France;

    CEA, LITEN, INES, 50 av du Lac Léman, F-73377, Le Bourget du Lac, France;

    Institut des Nanotechnologies de Lyon (INL), UMR 5270, University of Lyon, INSA-Lyon,20 rue Albert Einstein, 69621 Villeurbanne Cedex, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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