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首页> 外文期刊>Journal of Applied Physics >Modulation of flat-band voltage on H-termfnated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events
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Modulation of flat-band voltage on H-termfnated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events

机译：通过吸附和反应事件对H端绝缘体上的transistor金属氧化物半导体场效应晶体管上的平带电压进行调制

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摘要

Accumulation mode pseudo-MOSFETs formed on hydrogen terminated silicon-on-insulator (SOI-H) were used to probe molecular adsorption and reaction events. Current-voltage characteristics of such n-channel devices are found to be sensitive to the environment, with the accumulation threshold voltage, or flat-band voltage, exhibiting large reversible changes upon cycling between ambient atmosphere, high vacuum (＜ 10~(-5) Torr), and exposure to water and pyridine vapor at pressures in the Torr range. The field-effect mobility is found to be comparatively less affected through these transitions. Oxidation of the H-terminated surface in ambient conditions leads to irreversible shifts in both the flat-band voltage and the field-effect mobility. A photochemical gas phase reaction with decene is used to form a decyl monolayer on the SOI(100)-H surface. Formation of this monolayer is found to result in a relatively small shift of the threshold voltage and only a slight degradation of the field effect mobility, suggesting that alkyl monolayer dielectrics formed in this way could function as good passivating dielectrics in field effect sensing applications.
机译：使用在氢封端的绝缘体上硅（SOI-H）上形成的累积模式伪MOSFET来探测分子吸附和反应事件。发现这种n沟道器件的电流-电压特性对环境敏感，其累积阈值电压或平带电压在周围大气之间循环时显示出可逆的大变化，高真空度（<10〜（-5 ）Torr），并在Torr范围内的压力下暴露于水和吡啶蒸气中。发现通过这些转变，场效应迁移率受到的影响相对较小。在环境条件下，H端表面的氧化会导致平带电压和场效应迁移率发生不可逆转。与癸烯的光化学气相反应用于在SOI（100）-H表面上形成癸基单层。发现该单层的形成导致阈值电压的相对较小的偏移，并且场效应迁移率仅轻微降低，这表明以这种方式形成的烷基单层电介质可以在场效应感测应用中用作良好的钝化电介质。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.1004-1010|共7页
  • 作者

    Girjesh Dubey; Federico Rosei; Gregory P. Lopinski;

  • 作者单位

    Steacie Institute for Molecular Sciences, National Research Council, 100 Sussex Drive, Ottawa,Ontario K1A 0R6, Canada,INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X1S2, Canada;

    INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X1S2, Canada,Center for Self-Assembled Chemical Structures, McGill University, 801 Sherbrooke Street West, Montréal,Québec H3A 2K6, Canada;

    Steacie Institute for Molecular Sciences, National Research Council, 100 Sussex Drive, Ottawa,Ontario K1A 0R6, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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