...
首页> 外文期刊>Journal of Applied Physics >Temperature and frequency characteristics of low-loss MnZn ferrite in a wide temperature range
【24h】

Temperature and frequency characteristics of low-loss MnZn ferrite in a wide temperature range

机译:宽温度范围内低损耗MnZn铁氧体的温度和频率特性

获取原文
获取原文并翻译 | 示例
           

摘要

A low-loss Mn_(0.7)Zn_(0.24)Fe_(2.06)O_4 ferrite has been prepared by a solid-state reaction method. The MnZn ferrite has a high initial permeability, μ_i, (3097), a high saturation induction, B_s (526 mT), a high Curie temperature, T_c (220 ℃), and a low core loss, P_L (≤ 415 kW/m~3) in a wide temperature (25-120 ℃) and frequency (10-100 kHz) range. As the temperature increases, an initial decrease followed by a subsequent increase of hysteresis loss, P_h, and eddy current loss, P_e is observed. Both P_h and P_e increase with increasing frequency. When f≥ 300 kHz, a residual loss, P_r, appears. P_e increases with increasing temperature and frequency. The temperature and frequency dependence of P_h can be explained by irreversible domain wall movements, P_e by the skin effect, and P_r by domain wall resonance, respectively.
机译:已经通过固态反应方法制备了低损耗的Mn_(0.7)Zn_(0.24)Fe_(2.06)O_4铁氧体。 MnZn铁氧体具有高的初始磁导率μ_i(3097),高的饱和电感B_s(526 mT),居里温度T_c(220℃)和低的铁损P_L(≤415 kW / m) 〜3)在较宽的温度(25-120℃)和频率(10-100 kHz)范围内。随着温度的升高,首先观察到磁滞损耗P_h的下降,随后磁滞损耗P_e的上升,随后涡流损耗P_e的上升。 P_h和P_e都随频率增加而增加。当f≥300 kHz时,会出现残余损耗P_r。 P_e随着温度和频率的增加而增加。 P_h的温度和频率依赖性可以通过不可逆的畴壁运动来解释,P_e通过集肤效应来解释,P_r可以通过畴壁共振来解释。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.1069-1071|共3页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science andTechnology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号