...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics
【24h】

Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

机译：源极和漏极接触对基于阳极氧化铝栅极电介质的铟锌氧化物薄膜晶体管性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thin-film transistors (TFTs) based on indium-zinc oxide (IZO) active layer and anodic aluminum oxide (Al_2O_3) gate dielectric layer were fabricated. The influence of source and drain (S/D) contacts on TFT performance was investigated by comparing IZO-TFTs with different S/D electrodes. The TFT with Mo S/D electrodes had higher output current and lower threshold voltage, but had poorer subthreshold swing and lower effective electron mobility compared to that with ITO S/D electrodes. By using x-ray photoelectron spectroscopy (XPS) depth profile analyzing method, it was observed that Mo was diffusing seriously into IZO, resulting in the variation of the effective channel length, thereby causing serious short-channel effect, poor subshreshold swing, and bad uniformity of the TFTs with Mo S/D electrodes.
机译：制造了基于铟锌氧化物（IZO）有源层和阳极氧化铝（Al_2O_3）栅极介电层的薄膜晶体管（TFT）。通过比较具有不同S / D电极的IZO-TFT，研究了源极和漏极（S / D）触点对TFT性能的影响。带有Mo S / D电极的TFT与ITO S / D电极相比，具有较高的输出电流和较低的阈值电压，但具有较低的亚阈值摆幅和较低的有效电子迁移率。通过使用X射线光电子能谱（XPS）深度剖面分析方法，观察到Mo严重扩散到IZO中，导致有效通道长度发生变化，从而导致严重的短通道效应，较差的下阈值摆幅和不良的影响。带有Mo S / D电极的TFT的均匀性。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.103703.1-103703.7|共7页
  • 作者

    Linfeng Lan; Miao Xu; Junbiao Peng; Hua Xu; Min Li; Dongxiang Luo; Jianhua Zou; Hong Tao; Lei Wang; Rihui Yao;

  • 作者单位

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China,New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China,New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China;

    New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China,New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China;

    Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号