Pulsed terahertz emission from GaN/InN heterostructure

Antanas Reklaitis

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Pulsed terahertz emission from GaN/InN heterostructure

机译：GaN / InN异质结构的脉冲太赫兹发射

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Dynamics of the electron-hole plasma excited by the femtosecond optical pulse in wurtzite GaN/ InN heterostructure is investigated by Monte Carlo simulations. The GaN/InN heterostructure for pulsed terahertz emission is suggested. The results of Monte Carlo simulations show that the power of terahertz emission from the GaN/InN heterostructure exceeds the power of terahertz emission from the surface of InN by one order of magnitude.

机译：通过蒙特卡洛模拟研究了飞秒光脉冲激发纤锌矿GaN / InN异质结构中电子空穴等离子体的动力学。建议用于脉冲太赫兹发射的GaN / InN异质结构。蒙特卡罗模拟的结果表明，GaN / InN异质结构的太赫兹发射功率比InN表面的太赫兹发射功率大一个数量级。

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来源
《Journal of Applied Physics》 |2011年第10期|p.103103.1-103103.6|共6页
作者
Antanas Reklaitis;
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作者单位

Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goshtauto 11, Vilnius 01108, Lithuania;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes [J] . Reklaitis A Journal of Physics. Condensed Matter . 2008,第38期

机译：太赫兹频率InN / GaN异质结构势垒变容二极管
2. Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique [J] . B. F. Spencer, W. F. Smith, M. T. Hibberd, Applied Physics Letters . 2016,第21期

机译：使用高场脉冲磁体和异步光学采样技术的AlGaN / GaN异质结构的太赫兹回旋共振光谱
3. GENERATION OF TERAHERTZ RADIATION IN LED HETEROSTRUCTURES WITH MULTIPLE InGaN/GaN QUANTUM WELLS AT TWO-PHOTON EXCITATION BY FEMTOSECOND LASER PULSES [J] . Prudaev I. A., Sarkisov S. Yu, Tolbanov O. P., Russian physics journal . 2015,第2期

机译：费米激光脉冲在两光子激发下在具有多个InGaN / GaN量子阱的LED异质结构中产生THERHERTZ辐射
4. Pulsed Metalorganic Chemical Vapor Deposition of In-Polar and N-Polar InN Semiconductors on GaN/Sapphire for Terahertz Applications [C] . Hongping Zhao, M. Jamil, Guangyu Liu, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：用于太赫兹应用的GaN / Sapphire上的极性和N-POIL INN半导体的脉冲金属化学气相沉积
5. Study of pulsed terahertz wave emission and detection from III-V and II-VI materials. [D] . Liu, Kai. 2005

机译：研究脉冲太赫兹波发射以及从III-V和II-VI材料进行检测。
6. Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents [O] . Vitaly Leonidovich Malevich, Pavel Aliaksandravich Ziaziulia, Ričardas Norkus, 2021

机译：由弹性光电流引起的半导体异质结构的太赫兹脉冲发射
7. Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique [O] . Spencer, Ben F., Smith, William F., Hibberd, Morgan T., 2016

机译：使用高场脉冲磁体和异步光学采样技术的alGaN / GaN异质结构的太赫兹回旋共振谱

Pulsed terahertz emission from GaN/InN heterostructure

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