...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Dielectric relaxation near 25 K in multiferroic BiFeO_3 ceramics
【24h】

Dielectric relaxation near 25 K in multiferroic BiFeO_3 ceramics

机译：BiFeO_3多铁陶瓷中25 K附近的介电弛豫

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Our investigations using low-temperature Raman spectroscopy, dielectric, and magnetodielectric studies of as-prepared and vacuum-annealed BiFeO_3 ceramics revealed two dielectric anomalies near 25 and 281K. Systematic studies were carried out to probe the anomaly near 25 K which exhibits clear frequency dependence and falls close to a previously observed magnetic transition. The low-temperature dielectric relaxation behavior yielded characteristic energy scales of ～30 and ～34 meV for the as-prepared and vacuum-annealed BiFeO_3 samples, respectively. Raman spectra showed hardening of the E(T06) and E(TO9) modes near 25 K, and the Raman shift in phonon frequencies is found to be broader in the vacuum-annealed BiFeO_3 than in the as-prepared BiFeO_3-We observed a linear magnetodielectric coupling in both samples at 25 K. These experimental results suggest that coupling among spin, lattice, and dielectric properties persist to low temperatures in BiFeO_3.
机译：我们使用低温拉曼光谱，介电和磁电研究对制备的和真空退火的BiFeO_3陶瓷进行了研究，结果发现在25和281K附近有两个介电异常。进行了系统的研究以探测25 K附近的异常，该异常表现出明显的频率依赖性，并且接近先前观察到的磁跃迁。低温介电弛豫行为分别为制备的样品和真空退火的BiFeO_3样品产生了〜30和〜34 meV的特征能级。拉曼光谱显示，在25 K附近，E（T06）和E（TO9）模的硬化，并且发现在真空退火的BiFeO_3中，声子频率的拉曼位移比在准备好的BiFeO_3中更宽。我们观察到线性两个样品在25 K时的磁电耦合。这些实验结果表明自旋，晶格和介电特性之间的耦合持续存在于BiFeO_3中的低温下。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.104105.1-104105.6|共6页
  • 作者

    B. Ramachandran; A. Dixit; R. Naik; G. Lawes; M. S. Ramachandra Rao;

  • 作者单位

    Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, and Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India;

    Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

    Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

    Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

    Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, and Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号