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首页> 外文期刊>Journal of Applied Physics >Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells
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Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells

机译：InAs / AlSb / GaSb II型和断裂带隙量子阱中的能带杂交和自旋分裂

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摘要

We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells (QWs). An eight-band k·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and the highest heavy-hole subband in the InAs and GaSb layers respectively. In such a case, the position and magnitude of the gaps are spin-dependent. When a thin AlSb layer is inserted between the InAs and GaSb layers, we find that the lowest electron subband in the InAs layer is only hybridized with the highest light-hole subband which is also hybridized with the highest heavy-hole subband in the GaSb layer. The hybridized energy gaps and spin-splitting in the InAs/AlSb/GaSb QWs are reduced significantly. These results can be used to understand why electrons and holes can be well separated and why relatively high mobilities for electrons and holes can be achieved in InAs/AlSb/GaSb type II and broken-gap QWs. The present study is relevant to the applications of InAs/GaSb based QW structures as new generation of high-density and high-mobility electronic devices.
机译：我们对InAs / AlSb / GaSb量子阱（QWs）中的带杂化和零场自旋分裂的特征进行详细的理论研究。开发了一种八频带k·p方法来计算此类结构中的电子子带结构。在没有AlSb层的情况下，可以分别在InAs和GaSb层中最低电子子带和最高重空穴子带之间的反交叉点观察到杂化能隙。在这种情况下，间隙的位置和大小取决于自旋。当在InAs和GaSb层之间插入薄AlSb层时，我们发现InAs层中最低的电子子带仅与最高的光孔子带混合，也与GaSb层中的最高重孔子带混合。 InAs / AlSb / GaSb量子阱中的杂化能隙和自旋分裂显着降低。这些结果可以用来理解为什么电子和空穴可以很好地分离，以及为什么在II型InAs / AlSb / GaSb和能隙的QW中可以实现较高的电子和空穴迁移率。本研究与基于InAs / GaSb的QW结构作为新一代高密度和高迁移率电子设备的应用有关。

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  • 来源
    《Journal of Applied Physics》 |2010年第5期|P.053709.1-053709.9|共9页
  • 作者

    W. Xu; L. L. Li; H. M. Dong; G. Gumbs; P. A. Folkes;

  • 作者单位

    Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China Department of Physics, Yunnan University, Kunming 650091, China;

    rnKey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;

    rnKey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;

    Hunter College, City University of New York, New York 10021, USA;

    rnU.S. Army Research Laboratory, Adelphi, Maryland 20783, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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