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首页> 外文期刊>Journal of Applied Physics >Element-specific Study Of The Temperature Dependent Magnetization Of Co-mn-sb Thin Films
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Element-specific Study Of The Temperature Dependent Magnetization Of Co-mn-sb Thin Films

机译：Co-mn-sb薄膜随温度变化的磁化强度的元素特定研究

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Magnetron sputtered thin Co-Mn-Sb films were investigated with respect to their element-specific magnetic properties. Stochiometric Co_1Mn_1Sb_1 crystallized in the C1_b structure has been predicted to be half-metallic and is therefore of interest for spintronic applications. It should show a characteristic antiferromagnetic coupling of the Mn and Co magnetic moments and a transition temperature T_c of about 480 K. Although the observed transition temperature of our 20 nm thick Co_(32.4)Mn_(33.7)Sb_(33.8), Co_(33.7)Mn_(34.1)Sb_(15.2), and Co_(43.2)Mn_(32.6)Sb_(24.2) films is in quite good agreement with the expected value, we found a ferromagnetic coupling of the Mn and Co magnetic moments which indicates that the films do not crystallize in the C1_b structure and are probably not fully spin polarized. The ratio of the Co and Mn moments does not change up to the transition temperature and the temperature dependence of the magnetic moments can be well described by the mean-field theory.
机译：研究了磁控溅射Co-Mn-Sb薄膜的特定元素磁性。已经预测在C1_b结构中结晶的化学计量Co_1Mn_1Sb_1是半金属的，因此对于自旋电子学应用很感兴趣。它应该表现出Mn和Co磁矩的特征性反铁磁耦合以及约480 K的转变温度T_c。尽管观察到我们20 nm厚的Co_（32.4）Mn_（33.7）Sb_（33.8），Co_（33.7 ）Mn_（34.1）Sb_（15.2）和Co_（43.2）Mn_（32.6）Sb_（24.2）膜与预期值非常吻合，我们发现Mn和Co磁矩的铁磁耦合表明薄膜不会在C1_b结构中结晶，并且可能没有完全自旋极化。 Co和Mn矩之比在转变温度以下不会改变，并且磁矩的温度相关性可以用平均场理论很好地描述。

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