...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Zinc Oxide Nanolevel Surface Transformation For Liquid Crystal Orientation By Ion Bombardment
【24h】

Zinc Oxide Nanolevel Surface Transformation For Liquid Crystal Orientation By Ion Bombardment

机译：离子轰击氧化锌纳米级表面转变用于液晶取向

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper introduces the characteristics of the zinc oxide (ZnO) inorganic film deposited by radio-frequency magnetron sputtering as an alternative alignment layer for liquid crystal displayrn(LCD) applications. The crystalline structure related to the texture formation of ZnO (1013) was observed with a tilt angle of approximately 28.1° to the ZnO (0001) plane, leading to a smooth surface and high-density structure. Ion beam (IB) bombardment at various incident angles was used to induce liquid crystal (LC) alignment and cause the measured pretilt angle on ZnO films to assume a triangular contour. The orientation order of liquid crystal molecules was due to the van der Waals force for the vertical alignment of LCs with selective breaking of O-Zn bonds by IB bombardment. The contact angle contour as a function of the IB incident angle resembled the behavior of the pretilt angle. The pretilt angle is controllable by adjusting the surface features on ZnO films with IB bombardment. The electro-optic characteristics of vertically aligned (VA)-LCD based on ZnO film were comparable to those of VA-LCD based on polyimide, showing good potential of ZnO film as a LC alignment layer.
机译：本文介绍了通过射频磁控溅射沉积的氧化锌（ZnO）无机膜作为液晶显示器（LCD）应用的替代取向层的特性。观察到与ZnO（1013）的织构形成有关的晶体结构，相对于ZnO（0001）平面的倾斜角约为28.1°，从而形成了光滑的表面和高密度的结构。使用离子束（IB）轰击各种入射角来诱导液晶（LC）对准，并使ZnO膜上测得的预倾斜角呈现三角形轮廓。液晶分子的取向顺序归因于范德华力，该范德华力通过IB轰击选择性地破坏O-Zn键，从而使LC垂直排列。随IB入射角变化的接触角轮廓类似于预倾斜角的行为。通过用IB轰击调节ZnO薄膜的表面特征，可以控制预倾角。基于ZnO膜的垂直取向（VA）-LCD的电光特性与基于聚酰亚胺的VA-LCD的电光特性相当，显示出作为LC取向层的ZnO膜的良好电势。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第5期|626-632|共7页
  • 作者

    Byeong-Yun Oh; Won-Kyu Lee; Young-Hwan Kim; Dae-Shik Seo;

  • 作者单位

    Department of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu,rnSeoul 120-749, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号