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首页> 外文期刊>Journal of Applied Physics >On The Activation And Passivation Of Precursors For Process-induced Positive Charges In Hf-dielectric Stacks
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On The Activation And Passivation Of Precursors For Process-induced Positive Charges In Hf-dielectric Stacks

机译：高频介电堆栈中过程感应正电荷的前驱物的活化和钝化

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Hf-based dielectric stack is replacing SiON as gate dielectric even though our understanding of it is incomplete. It has been reported that a thermal exposure above 450 ℃ can lead to positive charging in both unoptimized SiO_2 layer and Hf-based dielectric stack. At present, there is little information on how this process-induced positive charging (PIPC) occurs in the Hf-based stack and how to suppress it. The objective of the current work is to improve our understanding by addressing three key issues. First, the activation of PIPC precursors after device fabrication is investigated and it will be shown that the loss of certain species from the gate edge through lateral diffusion is responsible for it. Second, the passivation of the precursor is studied and the relevant species are explored. It is found that both water- and chlorine-related species play a role. Finally, the reactivation of the passivated precursor is examined and the results show that it is not thermally accelerated.
机译：基于Hf的电介质堆栈正在取代SiON作为栅极电介质，尽管我们对其了解还不完整。据报道，在450℃以上的热暴露会在未优化的SiO_2层和Hf基介电堆栈中产生正电荷。目前，关于基于过程的正电荷（PIPC）如何在基于Hf的电池堆中以及如何抑制它的信息很少。当前工作的目的是通过解决三个关键问题来增进我们的理解。首先，研究了器件制造后PIPC前驱物的活化，结果表明，某些物质从栅极边缘通过横向扩散而损失是造成这种现象的原因。其次，对前体的钝化进行了研究，并探索了相关的物种。发现与水和氯有关的物种都起作用。最后，检查了钝化前体的再活化，结果表明它没有被热加速。

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