Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

A. Al Choueiry; A. M. Jurdyc; B. Jacquier; F. Gourbilleau; R. Rizk

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Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

机译：掺的富硅氧化硅多层膜的亚微秒荧光动力学

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The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 μm. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er~(3+) ions, which emit in the visible and the infrared region.

机译：通过荧光动力学测量研究了掺Er的富硅氧化硅中非晶硅纳米粒子与离子之间的能量转移过程。在1.53μm的relaxation激发离子的辐射弛豫的波长范围内观察到快速衰减。替代先前的解释，我们将这种快速衰减归因于由Er〜（3+）离子的基于Si的敏化剂诱导的深陷阱的发射，该陷阱在可见光和红外区域发射。

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《Journal of Applied Physics》 |2009年第5期|053107.1-053107.5|共5页
作者
A. Al Choueiry; A. M. Jurdyc; B. Jacquier; F. Gourbilleau; R. Rizk;
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作者单位

Universite de Lyon, Universite Lyon 1, CNRS/LPCML, F-69622 Villeurbanne Cedex, France;

Universite de Lyon, Universite Lyon 1, CNRS/LPCML, F-69622 Villeurbanne Cedex, France;

Universite de Lyon, Universite Lyon 1, CNRS/LPCML, F-69622 Villeurbanne Cedex, France;

CIMAP, UMR CNRS/CEA/ENSICAEN/Universite de Caen, 6 Bd. Marechal Juin, F-14050 Caen Cedex, France;

CIMAP, UMR CNRS/CEA/ENSICAEN/Universite de Caen, 6 Bd. Marechal Juin, F-14050 Caen Cedex, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. Fluorescence line narrowing and decay dynamics of Er~(3+) ions in silicon-rich silicon oxide multilayers [J] . Antoine Al Choueiry, Anne-Marie Jurdyc, Bernard Jacquier, Optical Materials . 2008,第12期

机译：富硅氧化硅多层膜中Er〜（3+）离子的荧光线变窄和衰减动力学
2. Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation [J] . Xu F., Xiao ZS., Cheng GA., Journal of Physics. Condensed Matter . 2002,第3期

机译：金属蒸气真空电弧离子源注入制备掺-富硅二氧化硅/硅薄膜
3. Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide [J] . Sebastien Cueff, Christophe Labbe, Benjamin Dierre, Journal of Nanophotonics . 2011,第Null期

机译：掺富硅氧化硅的阴极发光和光致发光比较研究
4. Simultaneous achievement of high-quality oxide passivation of nc-Si and suppression of Er de-activation by silicon-rich silicon oxide/Er-doped silicon nitride multilayers [C] . In Yong Kim, Jung H. Shin, Kyung Joon Kim, IEEE International Conference on Group IV Photonics . 2008

机译：通过富含含硅氧化硅/ ER掺杂的氮化硅多层多层的NC-Si的高质量氧化物钝化和抑制ER去活化的同时实现
5. Light Emission and Slot Waveguide Effect in erbium-doped silicon dioxide/silicon nanocrystalline Multilayer Structures. [D] . Fu, Yijing. 2012

机译：掺二氧化硅/硅纳米晶多层结构中的发光和缝隙波导效应。
6. Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films [O] . Lu Jin, Dongsheng Li, Luelue Xiang, 2013

机译：掺富硅氧化物薄膜中从发光中心到Er3 +的能量转移
7. Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films [O] . Cueff, Sébastien, Labbé, Christophe, Cardin, Julien, 2011

机译：厚度对掺富硅氧化硅薄膜性能的影响

Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

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