Self-heating and trapping effects in AIGaN/GaN heterojunction field-effect transistors

I. Saidi; M. Gassoumi; H. Maaref; H. Mejri; C. Gaquiere

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Self-heating and trapping effects in AIGaN/GaN heterojunction field-effect transistors

机译：AIGaN / GaN异质结场效应晶体管中的自热和俘获效应

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This work first attempted to simulate the band edges of AlGaN/GaN high electron mobility transistors (HEMTs) structures with Ga-face polarity at the heterointerface. The spontaneous and piezoelectric-induced polarization fields as well as the effects of temperature on the electron band parameters have been included into the modeling. In a second step, we calculated self-consistently direct-current characteristics of AlGaN/GaN HEMTs without considering any defect. Calculations were made as a function of doping concentration and Al composition. In the paper, the self-heating in AlGaN/GaN HEMTs grown on SiC substrate before and after Si_3N_4 passivation was also investigated revealing that: (ⅰ) power dissipation is induced due to the increase in drain bias, which leads to a temperature rise of the two-dimensional electron gas in the channel, (ⅱ) an enhancement in drain current is achieved after Si_3N_4 passivation, (ⅲ) the self-heating occurs even in AIGaN/GaN heterostructures after passivation. Including thermal and trapping effects in transistor device model can allow adjusting of some of the electron transport parameters in order to obtain optimized current at the output.

机译：这项工作首先尝试模拟异质界面上具有Ga面极性的AlGaN / GaN高电子迁移率晶体管（HEMT）结构的能带边缘。自发和压电感应的极化场以及温度对电子带参数的影响已包括在模型中。第二步，我们计算了AlGaN / GaN HEMT的自洽直流电特性，而不考虑任何缺陷。作为掺杂浓度和Al组成的函数进行计算。本文还研究了Si_3N_4钝化前后在SiC衬底上生长的AlGaN / GaN HEMT中的自热现象，发现：（to）由于漏极偏置的增加而引起功耗，导致温度升高沟道中的二维电子气，（ⅱ）钝化了Si_3N_4后，漏极电流得到了提高，（ⅲ）钝化后，即使在AlGaN / GaN异质结构中也发生了自热。在晶体管器件模型中包括热效应和陷阱效应，可以调整某些电子传输参数，以便在输出端获得最佳电流。

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来源
《Journal of Applied Physics》 |2009年第5期|054511.1-054511.7|共7页
作者
I. Saidi; M. Gassoumi; H. Maaref; H. Mejri; C. Gaquiere;
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作者单位

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Departement de Physique, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia;

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Departement de Physique, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia;

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Departement de Physique, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia;

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Departement de Physique, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia Unite de Recherche de Mathematiques Appliquees et Physique Mathematiques, Ecole Preparatoire aux Academies Militaires, Avenue Marechal Tito, 4029 Sousse, Tunisia;

Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN (TIGER), Departement hyperfrequences et Semiconducteurs, Universite des Sciences et Technologies de Lille, Avenue Poincare, 59652 Villeneuve d'Ascq Cedex, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Non-localized trapping effects in AIGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress [J] . Cheng-Yu Hu, Tamotsu Hashizume Journal of Applied Physics . 2012,第8期

机译：承受导通状态偏置应力的AIGaN / GaN异质结场效应晶体管中的非局部俘获效应
2. Trapping effect evaluation of gateless AIGaN/GaN heterojunction field-effect transistors using transmission-line-model method [J] . Cheng-Yu Hu, Tamotsu Hashizume, Kota Ohi, Applied Physics Letters . 2010,第22期

机译：使用传输线模型方法评估无栅AIGaN / GaN异质结场效应晶体管的陷阱效应
3. Trapping effects in Al_2O_3/AIGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements [J] . P. Kordos, R. Stoklas, D. Gregusova, Applied Physicsletters . 2010,第1期

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4. Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy [C] . Nazari Mohammad, Hancock Bobby Logan, Piner Edwin L., 2015 IEEE Compound Semiconductor Integrated Circuit Symposium . 2015

机译：紫外可见可见拉曼光谱研究的GaN基异质结场效应晶体管中的自热
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

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机译：承受通态偏置应力的AlGaN / GaN异质结场效应晶体管中的非局部俘获效应

Self-heating and trapping effects in AIGaN/GaN heterojunction field-effect transistors

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