Band alignment at SrCu_2O_2/ZnO heterointerface

I. Konovalov; R. Hesse

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Band alignment at SrCu_2O_2/ZnO heterointerface

机译：SrCu_2O_2 / ZnO异质界面的能带对准

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SrCu_2O_2/ZnO interface is interesting for application in blue and UV light emission devices. Measurements of the valence band offset at SrCu_2O_2/ZnO interface using photoelectron spectroscopy result in an offset of 2.0 eV (cliff), meaning that the interface band gap is reduced to 1.4 eV. Blue and UV light emission observed previously can be attained in this material system presumably by injection of minority carriers involving tunneling through a narrow barrier at the interface. Additional intensive infrared light emission due to interface recombination can be predicted.

机译：SrCu_2O_2 / ZnO界面在蓝色和紫外光发射设备中的应用很有趣。使用光电子能谱法测量SrCu_2O_2 / ZnO界面上的价带偏移会导致2.0 eV（悬崖）的偏移，这意味着界面带隙减小到1.4 eV。可以通过在该材料系统中注入少数载流子来获得先前观察到的蓝色和紫外线发光，该少数载流子包括通过界面处的狭窄势垒隧穿。可以预测由于界面重组而产生的额外的强烈红外光发射。

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来源
《Journal of Applied Physics》 |2009年第5期|056102.1-056102.3|共3页
作者
I. Konovalov; R. Hesse;
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Wilhelm Ostwald Institute for Physical and Theoretical Chemistry, Universitat Leipzig, Linnestrasse 2, D-04103 Leipzig, Germany;

Wilhelm Ostwald Institute for Physical and Theoretical Chemistry, Universitat Leipzig, Linnestrasse 2, D-04103 Leipzig, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Band alignment at SrCu_2O_2/ZnO heterointerface

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