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首页> 外文期刊>Journal of Applied Physics >Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
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Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

机译：通过原子力显微镜图像的光谱分析评估了退火期间InGaN外延层的形貌变化

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摘要

During annealing, the morphologies of thin InGaN epilayers have been observed to change from a terraced structure to a network of interlinking InGaN strips separated by troughs. This change in morphology may contribute to high efficiencies in some GaN-based light emitting diodes (LEDs) if the InGaN is exposed to elevated temperatures without a protective GaN capping layer. Here, we investigate the changes in morphology which occur when InGaN epilayers are annealed at their growth temperature under NH_3, N_2, and a small H_2 flux. We observe that while the layers initially roughen, more extended anneals lead to the surface becoming smooth and terraced once again. Power spectral density analysis of atomic force microscopy data is used to show that the dominant mechanism for roughening is loss of material from pre-existing pits, while the dominant smoothening mechanism is surface diffusion. This mechanistic analysis may be relevant to the growth of InGaN quantum wells in LED structures.
机译：在退火过程中，已观察到薄的InGaN外延层的形态从梯形结构变为由沟槽分隔的互连InGaN条带网络。如果将InGaN暴露在高温下而没有保护性GaN覆盖层，则这种形态变化可能有助于提高某些GaN基发光二极管（LED）的效率。在这里，我们研究了当InGaN外延层在NH_3，N_2和小的H_2通量下在其生长温度下退火时发生的形貌变化。我们观察到，虽然各层最初变粗糙，但退火时间延长导致表面变得光滑且再次呈梯形。原子力显微镜数据的功率谱密度分析表明，粗糙化的主要机理是材料从原有凹坑中流失，而平滑的主要机理是表面扩散。这种机理分析可能与LED结构中InGaN量子阱的生长有关。

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  • 来源
    《Journal of Applied Physics》 |2009年第5期|054319.1-054319.6|共6页
  • 作者

    Rachel A. Oliver; Joy Sumner; Menno J. Kappers; Colin J. Humphreys;

  • 作者单位

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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