...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >lon-beam-induced chemical disorder in GaN
【24h】

lon-beam-induced chemical disorder in GaN

机译：GaN中的离子束诱导化学无序

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Atomistic structures of high-energy ion irradiated GaN were examined using transmission electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic temperatures with 2 MeV Au~(2+) ions to a fluence of 7.35 × 10~(15) Au/cm~2. Cross-sectional TEM observations revealed that damaged layers consisting of amorphous and nanocrystalline phases are formed at the surface and buried depth of the as-irradiated GaN substrate. Atomic radial distribution functions of the amorphous/polynanocrystalline regions showed that not only heteronuclear Ga-N bonds but also homonuclear Ga-Ga bonds exist within the first coordination shell. It was found that the ratio of heteronuclear-to-homonuclear bonds, i.e., the degree of chemical disorder, is different between the surface and buried damaged layers. The alternation of chemical disorder was attributed to the difference in the defect formation processes between these layers.
机译：使用透射电子显微镜（TEM）检查了高能离子辐照GaN的原子结构。在低温下用2 MeV Au〜（2+）离子辐照单晶GaN衬底，其通量为7.35×10〜（15）Au / cm〜2。截面TEM观察表明，在被辐照的GaN衬底的表面和掩埋深度处形成了由非晶相和纳米晶相组成的受损层。非晶/多晶区域的原子径向分布函数表明，在第一配位壳中不仅存在异核Ga-N键，而且还存在同核Ga-Ga键。发现异核键与同核键的比率，即化学无序程度，在表面和埋入的受损层之间是不同的。化学无序的变化归因于这些层之间缺陷形成过程的差异。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第5期|053513.1-053513.14|共14页
  • 作者

    Manabu lshimaru; Yanwen Zhang; William J. Weber;

  • 作者单位

    Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    Pacific Northwest National Laboratory. P.O. Box 999, Richland, Washington 99352, USA;

    Pacific Northwest National Laboratory. P.O. Box 999, Richland, Washington 99352, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号