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机译:同步加速器测量线宽缩放对高级Cu / Low-k互连中应力的影响
School of Electrical, Electronic, and Computer Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France;
Intel Corp. Industrial Resident, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
School of Electrical, Electronic, and Computer Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom;
School of Electrical, Electronic, and Computer Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
机译:用X射线衍射研究介电孔隙率对高级Cu / low-k互连中应力的影响
机译:使用同步加速器辐射在100 nm Cu / low-k镶嵌互连中由Cu-Mn合金自形成势垒的原位X射线衍射研究
机译:Cu / low-k半导体互连的电迁移和应力消除-65 nm互连技术及其他
机译:同步加速器测量介电孔隙率和气隙对高级Cu / Low-k互连中应力的影响
机译:用于高级ULSI应用的Al(Cu)和Cu互连中的热应力和微观结构。
机译:用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
机译:高级Cu / Low-K互连架构中的介电故障机制