• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors
【24h】

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

机译：蒙特卡洛研究纳米级金属氧化物半导体场效应晶体管中表观磁阻迁移率

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper investigates the mobility extraction from channel magnetoresistance, which is widespreading as a powerful experimental method to study transport in short gate devices. A fully self-consistent Monte Carlo device simulator is used to simulate the influence of a transverse magnetic field on electron transport in nanometer scale devices. After validation on a simple silicon magnetic sensor, the method is applied to the simulation of the channel magnetoresistance of nanoscale double gate metal oxide semiconductor field effect transistors. Apparent magnetoresistance mobilities μ_(MR) are extracted from channel resistance variation with the applied magnetic field, using a measurement-inspired extraction method. The simulated temperature trends obtained by simulation are consistent with experimental data. As experimentally observed elsewhere, the extracted apparent mobility decreases with the shrinking of the channel length. No additional scattering mechanism specific to short channel devices was needed to observe this effect. This apparent mobility reduction observed in the simulated results is shown to originate from nonstationary transport, which is discussed and interpreted using simple numerical calculations. We propose a Mathiessen-like formalism in order to quantify this effect. Finally, ballistic transport is shown to have a significant impact on the apparent mobility extraction and must be taken into account if the apparent magnetoresistance mobility is to be used as a figure of merit to assess short device performance.
机译：本文研究了从沟道磁阻中提取迁移率的方法，该方法作为研究短栅器件中的输运的有力实验方法正在广泛传播。完全自洽的蒙特卡洛设备模拟器用于模拟横向磁场对纳米级设备中电子传输的影响。在简单的硅磁传感器上进行验证后，该方法被用于模拟纳米级双栅金属氧化物半导体场效应晶体管的沟道磁阻。使用基于测量的提取方法，从施加的磁场的沟道电阻变化中提取表观磁阻迁移率μ_（MR）。通过仿真获得的仿真温度趋势与实验数据一致。如在其他地方的实验所观察到的，提取的表观迁移率随通道长度的减小而降低。不需要其他专门针对短通道设备的散射机制来观察这种效果。在模拟结果中观察到的这种明显的迁移率降低显示为源自非平稳传输，使用简单的数值计算对此进行了讨论和解释。为了量化这种影响，我们提出了一种类似于Mathiessen的形式主义。最后，弹道传输对表观迁移率提取有显着影响，如果将表观磁阻迁移率用作评估短器件性能的指标，则必须考虑。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号