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首页> 外文期刊>Journal of Applied Physics >High Power Light-emitting Diode Junction Temperature Determination From Current-voltage Characteristics
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High Power Light-emitting Diode Junction Temperature Determination From Current-voltage Characteristics

机译：从电流-电压特性确定大功率发光二极管结温

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摘要

Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly dependent on the diode junction temperature. However, direct junction temperature determination is not possible and alternative methods must be developed. Current-voltage characteristics of commercial high power LEDs have been measured at six different temperatures ranging between 295 and 400 K. Modeling these characteristics, including variation in the bandgap with temperature, revealed a linear temperature dependence of the forward voltage if the drive current is chosen within a rather limited current range. Theoretically, the voltage intercept can be deduced from the bulk semiconductor bandgap. However, accurate junction temperature determination is only possible if at least two calibration measurements at a particular drive current are performed. The method described in this paper can be applied to calculate the thermal resistance from the junction to any other reference point for any particular LED configuration.
机译：功率发光二极管（LED）的光学和电气特性在很大程度上取决于二极管的结温。但是，无法直接确定结温，因此必须开发其他方法。已在295至400 K的六个不同温度下测量了商用大功率LED的电流-电压特性。对这些特性进行建模（包括带隙随温度的变化）表明，如果选择驱动电流，则正向电压的线性温度依赖性在相当有限的电流范围内。从理论上讲，可以从体半导体带隙推导出电压截距。但是，只有在特定的驱动电流下执行至少两次校准测量后，才能准确确定结温。本文描述的方法可用于计算从结到任何其他LED配置的任何其他参考点的热阻。

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