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Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

机译:设计磷和砷双施主掺杂锗中的自由空位和活性施主浓度

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摘要

In germanium, donor atoms migrate or form larger immobile clusters via their interaction with lattice vacancies. By engineering the concentration of free vacancies, it is possible to control the diffusion of the donor atoms and the formation of those larger clusters that lead to the deactivation of a significant proportion of the donor atoms. Electronic structure calculations in conjunction with mass action analysis are used to predict the concentrations of free vacancies and deactivated donor atoms in germanium doped with different proportions of arsenic and phosphorous. We find, for example, that at low temperatures, the concentration of free vacancies is partially suppressed by increasing the proportion of arsenic doping, whereas at high temperatures (above 1000 K), the concentration of free vacancies is relatively constant irrespective of the donor species. It is predicted that the free vacancy and active donor concentrations vary linearly with the arsenic to phosphorous ratio across a wide range of temperatures.
机译:在锗中,施主原子通过与晶格空位相互作用而迁移或形成更大的不动簇。通过设计自由空位的浓度,可以控制施主原子的扩散和那些导致大量施主原子失活的较大簇的形成。电子结构计算与质量作用分析相结合,用于预测掺有不同比例的砷和磷的锗中的空位和失活的供体原子的浓度。例如,我们发现,在低温下,通过增加砷掺杂的比例来部分抑制自由空位的浓度,而在高温(1000 K以上)下,无论供体种类如何,自由空位的浓度都相对恒定。 。可以预测,在广泛的温度范围内,自由空位和活性供体浓度随砷与磷的比率线性变化。

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  • 来源
    《Journal of Applied Physics》 |2008年第11期|577-580|共4页
  • 作者单位

    Department of Materials, Imperial College London, London SW7 2BP, United Kingdom;

    Department of Materials, Imperial College London, London SW7 2BP, United Kingdom;

    Institut fuer Materialphysik, Universitaet Muenster, Wilhelm-Klemm-Strasse 10, D-48149 Muenster, Germany;

    Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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