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首页> 外文期刊>Journal of Applied Physics >Time-resolved intervalley transitions in GaN single crystals
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Time-resolved intervalley transitions in GaN single crystals

机译：GaN单晶中的时间分辨的intervalley跃迁

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摘要

We present a direct observation of time-resolved intervalley transitions of electrons between the conduction band Γ and L valleys in GaN single crystals using a two-color (ultraviolet and near-infrared), femtosecond, pump-probe spectroscopic technique. We have found that the threshold for the Γ reversible L transition appears at the energy of 4.51 ± 0.05 eV and the electron scattering time from the Γ to L valley is comparable to the 170 fs width of our pump pulses, while the return process of electrons from L to Γ is measurably slower. The L to Γ scattering time is 1.02 ps, while the total depopulation time of the L valley is estimated to be ～ 20 ps. Our physical model, based on the three-state rate equations, fitted our experimental data very well and allowed us to calculate the optical phonon emission time of 290 fs. The deformation potential between the two valleys was also obtained from the intervalley scattering modeling and the value was 0.92 x 10~9 eV/cm.
机译：我们使用双色（紫外和近红外），飞秒，泵浦-探针光谱技术，对GaN单晶中导带Γ和L谷之间的电子在时间分辨的区间跃迁上进行了直接观察。我们发现Γ可逆L跃迁的阈值出现在能量为4.51±0.05 eV时，从Γ到L谷的电子散射时间与我们的泵浦脉冲的170 fs宽度相当，而电子的返回过程从L到Γ的速度明显较慢。 L到Γ的散射时间为1.02 ps，而L谷的总消失时间估计为〜20 ps。我们基于三态速率方程的物理模型很好地拟合了我们的实验数据，使我们能够计算出290 fs的光子声子发射时间。通过间隔间隔散射模型也获得了两个谷之间的变形势，其值为0.92 x 10〜9 eV / cm。

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