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Systematic study of disorder induced by neutron irradiation in MgB_2 thin films

机译:MgB_2薄膜中子辐照引起的无序的系统研究

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摘要

The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 10~(20) cm~(-2). All the properties of the films change systematically upon irradiation. Critical tenjperature is suppressed and, at the highest fluence, no superconducting transition is observed down to 1.8 K. Residual resistivity progressively increases from 1 to 190 μΩ cm; c axis expands and then saturates at the highest damage level. We discuss the mechanism of damage through the comparison with other damage procedures. The normal state magnetoresistivity of selected samples measured up to high fields (28 and 45 T) allows to determine unambiguously the scattering rates in each band; the crossover between the clean and dirty limit in each sample can be monitored. This set of samples, with controlled amount of disorder, is suitable to study the puzzling problem of critical field in magnesium diboride thin films. The measured critical field values are extremely high (of the order of 50 T in the parallel direction at low fluences) and turns out to be rather independent of the experimental resistivity, at least at low fluences. A simple model to explain this phenomenology is presented.
机译:研究了中子辐照对10〜(20)cm〜(-2)通量的外延二硼化镁薄膜正常态和超导性能的影响。薄膜的所有特性在辐照后都会系统改变。临界温度被抑制,在最高通量下,在低至1.8 K时未观察到超导转变。残余电阻率从1逐渐增加到190μΩcm; c轴先膨胀,然后达到最高损伤水平。通过与其他损害程序的比较,我们讨论了损害的机理。选定的样品在高磁场(28和45 T)下的正常状态磁电阻率可以确定每个频带的散射率。可以监测每个样品的清洁极限和脏极限之间的交叉。这组样品具有可控制的无序量,适合研究二硼化镁薄膜中临界场的令人费解的问题。测得的临界场值极高(在低通量下,平行方向上约为50 T),并且至少在低通量下与实验电阻率无关。一个简单的模型来解释这种现象。

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