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首页> 外文期刊>Journal of Applied Physics >Interfacial electronic structure of magnesium deposited on Ag-covered tris(8-hydroxyquinolato) aluminum film: A synchrotron radiation photoemission study
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Interfacial electronic structure of magnesium deposited on Ag-covered tris(8-hydroxyquinolato) aluminum film: A synchrotron radiation photoemission study

机译：沉积在银覆盖的三（8-羟基喹啉）铝膜上的镁的界面电子结构：同步加速器辐射光发射研究

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摘要

The deposition of magnesium on tris(8-hydroxyquinolato) aluminum (Alq_3) precovered with thin silver was investigated with high resolution synchrotron radiation photoemission. The noble-metal deposit first occupies the vicinity of the pyridyl ring. The appearance of a Fermi level suggests that the incorporated Ag behaves as a metallic cluster, consistent with the results of the Ag 3d cores, which show a nonzero Doniach-Sunjic singularity index of 0.061. Upon Mg adsorption on the Ag/Alq_3 surface, a MgAg mixture begins to develop such that the Ag 4d valence band becomes narrowed and its centroid shifts towards higher binding energy. A phase transformation is thus observed at the interface, from a Ag-rich phase to a Mg-rich phase. The product of the MgAg mixture prevents subsequent Mg atoms from penetrating into the Alq_3 film, which grows as a metal on top of the MgAg/Alq_3 interface.
机译：利用高分辨率同步辐射辐射光发射研究了镁在预先沉积有薄银的三（8-羟基喹啉）铝（Alq_3）上的沉积。贵金属沉积物首先占据吡啶环附近。费米能级的出现表明掺入的银表现为金属簇，与银3d核的结果一致，后者的非零Doniach-Sunjic奇异指数为0.061。当Mg吸附在Ag / Alq_3表面上时，MgAg混合物开始形成，使得Ag 4d价带变窄，其质心向更高的结合能移动。因此在界面上观察到从富银相到富镁相的相变。 MgAg混合物的产物可防止随后的Mg原子渗透到Alq_3膜中，该膜在MgAg / Alq_3界面顶部以金属形式生长。

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