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首页> 外文期刊>Journal of Applied Physics >Phenomenological characterization of photoactive centers in Bi_(12)TiO_(20) crystals
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Phenomenological characterization of photoactive centers in Bi_(12)TiO_(20) crystals

机译:Bi_(12)TiO_(20)晶体中光活性中心的现象学表征

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We report optical and electrical measurements contributing for a better characterization of the relevant photoactive center levels in undoped photorefractive Bi_(12)TiO_(20) (BTO) crystals grown in Brazil. Comparative results for Pb-doped BTO and Bi_(12)GaO_(20) are also reported. A center responsible for photochromism was identified at 0.42-0.44 eV, probably below the conduction band (CB). The main electron and hole donor center is detected at 2.2 eV from the CB and the equilibrium Fermi level is pinned at this level. Other localized centers were identified at different positions in the band gap and their relation with the behavior of BTO under different wavelengths and operating conditions is discussed with particular attention to holographic recording.
机译:我们报告光学和电气测量有助于更好地表征在巴西生长的未掺杂的光折光Bi_(12)TiO_(20)(BTO)晶体中的相关光敏中心能级。还报道了掺Pb的BTO和Bi_(12)GaO_(20)的比较结果。确定了负责光致变色的中心在0.42-0.44 eV,可能在导带(CB)以下。从CB在2.2 eV处检测到主要的电子和空穴供体中心,平衡费米能级固定在该水平。在带隙中的不同位置处确定了其他本地化中心,并特别关注全息记录,讨论了它们与BTO在不同波长和操作条件下的行为之间的关系。

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