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Experimental and theoretical study of heterogeneous iron precipitation in silicon

机译:硅中非均匀铁沉淀的实验和理论研究

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Heterogeneous iron precipitation in silicon was studied experimentally by measuring the gettering efficiency of oxide precipitate density of 1 x 10~(10) cm~(-3). The wafers were contaminated with varying iron concentrations, and the gettering efficiency was studied using isothermal annealing in the temperature range from 300 to 780 ℃. It was found that iron precipitation obeys the so-called s-curve behavior: if iron precipitation occurs, nearly all iron is gettered. For example, after 30 min annealing at 700 ℃, the highest initial iron concentration of 8 x 10~(13) cm~(-3) drops to 3 X 10~(12) cm~(-3), where as two lower initial iron concentrations of 5 x 10~(12) and 2 x 10~(13) cm~(-3) remain nearly constant. This means that the level of supersaturation plays a significant role in the final gettering efficiency, and a rather high level of supersaturation is required before iron precipitation occurs at all. In addition, a model is presented for the growth and dissolution of iron precipitates at oxygen-related defects in silicon during thermal processing. The heterogeneous nucleation of iron is taken into account by special growth and dissolution rates, which are inserted into the Fokker-Planck equation. Comparison of simulated results to experimental ones proves that this model can be used to estimate internal gettering efficiency of iron under a variety of processing conditions.
机译:通过测量1 x 10〜(10)cm〜(-3)的氧化物沉淀密度的吸杂效率,对硅中铁的异相沉淀进行了实验研究。晶片被不同的铁浓度污染,并在300至780℃的温度范围内使用等温退火研究了吸杂效率。发现铁的沉淀遵循所谓的S曲线行为:如果发生铁沉淀,则几乎所有的铁都被吸收。例如,在700℃退火30分钟后,最高初始铁浓度为8 x 10〜(13)cm〜(-3),降至3 X 10〜(12)cm〜(-3),低两个初始铁浓度为5 x 10〜(12)和2 x 10〜(13)cm〜(-3)几乎保持恒定。这意味着过饱和度在最终的吸杂效率中起着重要作用,并且在根本没有铁沉淀之前需要相当高的过饱和度。另外,提出了用于在热处理期间硅中氧相关缺陷处铁沉淀物的生长和溶解的模型。铁的异质成核是通过特殊的生长和溶解速率考虑的,它们被插入到Fokker-Planck方程中。将模拟结果与实验结果进行比较证明,该模型可用于估计各种加工条件下铁的内部吸杂效率。

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