Interdiffusion in narrow InGaAsN/GaAs quantum wells

W. Liu; D. H. Zhang; Z. M. Huang; S. Z. Wang; S. F. Yoon; W. J. Fan; C. J. Liu; A. T. S. Wee

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Interdiffusion in narrow InGaAsN/GaAs quantum wells

机译：InGaAsN / GaAs窄量子阱中的相互扩散

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Interdiffusion in In_(0.32)Ga_(0.68)As_(0.984)N_(0.016)/GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650℃ while the N diffusion occurred at a temperature above 700℃. The theoretical results are in good agreement with the experimental observations.

机译：通过实验和理论研究了In_（0.32）Ga_（0.68）As_（0.984）N_（0.016）/ GaAs分别具有2 nm和4 nm阱宽的多个量子阱之间的相互扩散。在光致发光光谱中观察到最大蓝移为206和264meV。二次离子质谱表明，In-Ga和N-As互扩散对大的蓝移起关键作用。 In-Ga之间的显着扩散发生在650℃，而N扩散发生在700℃以上。理论结果与实验结果吻合良好。

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来源
《Journal of Applied Physics》 |2007年第10期|p.103111.1-103111.6|共6页
作者
W. Liu; D. H. Zhang; Z. M. Huang; S. Z. Wang; S. F. Yoon; W. J. Fan; C. J. Liu; A. T. S. Wee;
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作者单位

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Interdiffusion in narrow InGaAsN/GaAs quantum wells

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