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首页> 外文期刊>Journal of Applied Physics >Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO_2 synthesized by Si ion implantation
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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO_2 synthesized by Si ion implantation

机译：纳米尺寸对Si离子注入合成SiO_2中Si纳米晶体光学性能的影响

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摘要

Si nanocrystals (nc-Si) with different sizes embedded in SiO_2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E_1 and E_2 exhibits a large reduction and a significant redshift in E_2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement.
机译：利用各种Si离子注入方法，合成了嵌入SiO_2基体中的不同尺寸的Si纳米晶（nc-Si）。纳米晶体尺寸对光学性能的影响，包括介电函数和光学常数，对nc-Si的影响已通过光谱椭圆偏振法进行了研究。发现四项Forouhi-Bloomer模型很好地描述了nc-Si的光学性质。观察到介电功能和光学常数对nc-Si尺寸的强烈依赖性。对于介电函数的虚部，根据nc-Si尺寸，跃迁能量E_1和E_2处的主峰幅度呈现出较大的降低，并且E_2中的红移显着。当nc-Si尺寸减小时，观察到带隙膨胀。随着nc-Si尺寸的减小，带隙扩展与基于量子约束的第一性原理计算的预测非常吻合。

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