We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8 X 10~(19) cm~(-3) is deduced prior to annealing.
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机译：我们已经研究了快速热退火（RTA）使用光致发光（PL）和双晶x射线衍射对GaAsN合金的光学和结构性能的影响。我们在RTA期间观察到明显的异常应变增强，PL峰值能量发生蓝移，同时发射线宽减小。 PL特征归因于合金均匀性的改善，应变的增强反映了退火过程中N相关配合物的变化。根据缺陷模型，在退火之前得出间隙氮浓度为1.8 X 10〜（19）cm〜（-3）。
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