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首页> 外文期刊>Journal of Applied Physics >Laser-induced breakdown spectroscopy of trisilane using infrared CO_2 laser pulses
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Laser-induced breakdown spectroscopy of trisilane using infrared CO_2 laser pulses

机译：红外CO_2激光脉冲对甲硅烷的激光诱导击穿光谱

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摘要

The plasma produced in trisilane (Si_3H_8) at room temperature and pressures ranging from 50 to 10~3 Pa by laser-induced breakdown (LIB) has been investigated. The ultraviolet-visible-near infrared emission generated by high-power IR CO_2 laser pulses in Si_3H_8 has been studied by means of optical emission spectroscopy. Optical breakdown threshold intensities in trisilane at 10.591 μm for laser pulse lengths of 100 ns have been measured as a function of gas pressure. The strong emission observed in the plasma region is mainly due to electronic relaxation of excited atomic H and Si and ionic fragments Si~+, Si~(2+), and Si~(3+). An excitation temperature T_(exc)=5600 ±300 K was calculated by means of H atomic lines assuming local thermodynamic equilibrium. The physical processes leading to LIB of trisilane in the power density range 0.28 GW cm~(-2) ＜ J ＜ 3.99 GW cm~(-2) have been analyzed.' From our experimental observations we can propose that, although the first electrons must appear via multiphoton ionization, electron cascade is the main mechanism responsible, for the breakdown in trisilane.
机译：研究了室温下在三硅烷（Si_3H_8）中通过激光诱导击穿（LIB）在50至10〜3 Pa范围内产生的等离子体。利用光发射光谱法研究了高功率IR CO_2激光脉冲在Si_3H_8中产生的紫外-可见-近红外发射。已经测量了在10.591μm的三硅烷中，对于100 ns的激光脉冲，其光击穿阈值强度是气压的函数。在等离子体区域中观察到的强发射主要是由于激发原子H和Si以及离子碎片Si〜+，Si〜（2+）和Si〜（3+）的电子弛豫。假设局部热力学平衡，通过H原子线计算出激发温度T_（exc）= 5600±300K。分析了导致功率密度范围为0.28 GW cm〜（-2）＜J ＜3.99 GW cm〜（-2）的甲硅烷的LIB的物理过程。从我们的实验观察中，我们可以提出，尽管第一个电子必须通过多光子电离出现，但电子级联反应是造成甲硅烷分解的主要机理。

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