Mobile dislocation density and strain relaxation rate evolution during In_xGa_(1-x)As/GaAs heteroepitaxy

C. Lynch; E. Chason; R. Beresford

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Mobile dislocation density and strain relaxation rate evolution during In_xGa_(1-x)As/GaAs heteroepitaxy

机译：In_xGa_（1-x）As / GaAs异质外延过程中的移动位错密度和应变弛豫速率演变

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The kinetics of dislocation-mediated strain relaxation have been investigated during In_xGa_(1-x)As/GaAs molecular beam epitaxy growth. We use in situ curvature measurement to determine the film stress as a function of time during deposition. The relaxation behavior includes a temperature dependent initial relaxation stage which partially relieves the misfit strain, followed by a rapid strain relaxation which commences at a temperature independent thickness and proceeds at a comparable rate at all temperatures studied. We discuss these observations in terms of the mobile dislocation density evolution and the dependence of the strain relaxation rate on the driving force and temperature.

机译：在In_xGa_（1-x）As / GaAs分子束外延生长过程中研究了位错介导的应变弛豫的动力学。我们使用原位曲率测量来确定薄膜应力与沉积过程中时间的关系。弛豫行为包括取决于温度的初始弛豫阶段，该阶段会部分缓解失配应变，然后是快速应变弛豫，该过程始于与温度无关的厚度，并在所有研究的温度下均以相当的速率进行。我们根据移动位错密度的演变以及应变松弛率对驱动力和温度的依赖性来讨论这些观察结果。

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来源
《Journal of Applied Physics》 |2006年第1期|p.013525.1-013525.7|共7页
作者
C. Lynch; E. Chason; R. Beresford;
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作者单位

Division of Engineering, Box D, Brown University, Providence, Rhode Island 02912;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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1. Strain relaxation by < 100 > misfit dislocations in dilute nitride In_xGa_(1-x)As_(1-y)N_y/GaAs quantum wells [J] . E. C. Young, A. N. Koveshnikov, S. Tixier, Physica Status Solidi. A, Applications and Materials Science . 2005,第15期

机译：稀氮化物In_xGa_（1-x）As_（1-y）N_y / GaAs量子阱中由<100>位错错位引起的应变弛豫
2. Equilibrium Lattice Relaxation and Misfit Dislocations in Continuously- and Step-Graded In_xGa_(1-x)As/GaAs (001) and GaAs_(1-y)P_y/GaAs (001) Metamorphic Buffer Layers [J] . Tedi Kujofsa, John E. Ayers International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2015,第3a4期

机译：连续渐变In_xGa_（1-x）As / GaAs（001）和GaAs_（1-y）P_y / GaAs（001）变形缓冲层中的平衡晶格弛豫和错配位错
3. Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy [J] . B. Perez Rodriguez, J. Mirecki Millunchick Journal of Applied Physics . 2006,第4期

机译：GaAsSb / GaAs异质外延中应变弛豫的位错动力学
4. Strain relaxation behaviour in In_xGa_(1-x)As quantum wells on misorientated GaAs (111)B substrates [C] . M Gutierrez, D Gonzalez, G Aragon, Royal Microscopical Society Conference, Mar 25-29, 2001, Oxford University . 2001

机译：In_xGa_（1-x）As量子阱中取向不正确的GaAs（111）B衬底上的应变弛豫行为
5. Measurement of dislocation velocities and mobile dislocation densities as a function of strain and strain rate in cadmium single crystals. [D] . Robson, Mark Todhunter. 2003

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6. Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well [O] . Lifen Han, Yonggang Zhu, Xinhui Zhang, 2011

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7. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality [O] . Moran, Peter D., Hansen, Darren Michael, Matyi, Richard J., 1999

机译：在Gaas兼容基板上的InGaas异质外延：X射线衍射证据表明增强的弛豫和改善的结构质量
8. 18 Micrometer Cutoff Long-Wavelength In_xGa_(1-x)As/GaAs Quantum-Well Infrared Photodetectors [R] . Gunapala, S. D., Bandara, K. V., Levine, B. F., 1993

机译：18微米截止长波长In_xGa_（1-x）as / Gaas量子阱红外光电探测器

Mobile dislocation density and strain relaxation rate evolution during In_xGa_(1-x)As/GaAs heteroepitaxy

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