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首页> 外文期刊>Journal of Applied Physics >Fabrication and optical characterization of hexagonal photonic crystal microcavities in InP-based membranes containing InAs/InP quantum dots
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Fabrication and optical characterization of hexagonal photonic crystal microcavities in InP-based membranes containing InAs/InP quantum dots

机译：包含InAs / InP量子点的InP基膜中六角形光子晶体微腔的制备和光学表征

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摘要

Hexagonal photonic crystal microcavities with missing-hole defects were fabricated in suspended InP membranes. Embedded InAs quantum dots were utilized as broadband emitters to characterize the modes of the cavities. Photoluminescence emission consists of two orthogonally polarized peaks corresponding to the two dipole modes of the hexagonal defect cavity of reduced symmetry. The emission wavelength ranges from 745 to 840 meV, depending on the crystal structure, and quality factors are up to 850. Finite-difference time-domain simulations reproduce the cavity mode energies and the quality factor dependence on the crystal structure, but predict quality factors systematically lower. The experimental quality factors and mode splittings are associated with a slight ellipticity of the lattice holes.
机译：在悬浮的InP膜中制造了具有缺孔缺陷的六边形光子晶体微腔。嵌入的InAs量子点被用作宽带发射器来表征腔的模式。光致发光发射包括两个正交极化的峰，这些峰对应于对称性降低的六角形缺陷腔的两个偶极子模式。发射波长范围从745到840 meV，取决于晶体结构，并且品质因数高达850。有限差分时域仿真再现了腔模能量以及品质因数对晶体结构的依赖性，但可以预测品质因数系统地降低。实验品质因数和模式分裂与晶格孔的椭圆度有关。

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