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首页> 外文期刊>Journal of Applied Physics >Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy
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Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy

机译：使用光学透射光谱法，近场扫描光学显微镜和扫描开尔文探针显微镜研究GaN：Mg中的成分波动

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摘要

Composition fluctuations in GaN:Mg have been investigated by optical transmission spectroscopy, near-field scanning optical microscopy (NSOM), and scanning Kelvin probe microscopy (SKPM). An Urbach tail is observed in the optical transmission spectrum of heavily Mg-doped GaN, with the magnitude of Urbach energy increasing with increasing compositional/potential fluctuations. From the relationship between the Urbach energy and the potential fluctuation magnitude, the spatial size of the compositional fluctuations in GaN:Mg (with the average Mg concentration of ～4 X 10~(19) cm~(-3)) is calculated to be 220 nm. The nanoscale compositional fluctuations are determined by NSOM and SKPM. A spatial variation of the transmission mode NSOM intensity is observed with a characteristic wavelength of ～300 nm, which is attributed to the inhomogeneous distribution of Mg. The normalized root-mean-square (rms) fluctuation of the transmission mode NSOM intensity for heavily Mg-doped GaN is a factor of 5 greater than that for undoped GaN. Similar microstructure patterns are observed in the NSOM and surface potential images of GaN:Mg as probed by SKPM. The variation of local surface potential (on the order of 100 mV) is attributed to the same compositional fluctuations of Mg, which changes the local surface work function. The local Mg concentrations are calculated from the SKPM image. For GaN:Mg with the Mg concentration of 4 X 10~(19) cm~(-3), a rms value of 5.4 X 10~(19) cm~(-3) of the compositional fluctuations has been observed.
机译：GaN：Mg中的成分波动已通过光学透射光谱法，近场扫描光学显微镜（NSOM）和扫描开尔文探针显微镜（SKPM）进行了研究。在重掺杂Mg的GaN的光传输光谱中观察到Urbach尾巴，随着组分/电势波动的增加，Urbach能量的大小增加。根据Urbach能量与电位涨落幅度之间的关系，计算出GaN：Mg组成涨落的空间大小（平均Mg浓度为〜4 X 10〜（19）cm〜（-3））。 220纳米纳米级成分波动由NSOM和SKPM确定。观察到透射模态NSOM强度的空间变化，其特征波长为〜300 nm，这归因于Mg的不均匀分布。重掺杂Mg的GaN的传输模式NSOM强度的归一化均方根（rms）波动是未掺杂GaN的归一化均方根（rms）系数的5倍。 SKPM探测到的GaN：Mg的NSOM和表面电势图像中观察到了相似的微观结构图案。局部表面电势的变化（大约100 mV）归因于Mg的相同成分波动，这会改变局部表面功函数。从SKPM图像计算出局部Mg浓度。对于Mg浓度为4 X 10〜（19）cm〜（-3）的GaN：Mg，均方根值为5.4 X 10〜（19）cm〜（-3）。

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  • 来源
    《Journal of Applied Physics》 |2005年第2期|p.023513.1-023513.6|共6页
  • 作者

    B. Han; B. W. Wessels; M. P. Ulmer;

  • 作者单位

    Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
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