Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si

T. H. Yang; K. S. Chi; L. J. Chen

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Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si

机译：在（001）Si上超高真空沉积的Ti薄膜的非晶中间层中形成Ti硅化物纳米晶体

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A number of nanosize Ti silicides, Ti_5Si_3, Ti_5Si_4, and TiSi, were found to form simultaneously in the amorphous intermixing layer of annealed ultrahigh-vacuum-deposited Ti thin films on (001)Si. Autocorrelation function analysis has been applied to the high-resolution transmission electron microscope images to identify the phases formed in the initial stages of reaction. The intermediate silicide phases were detected to form earlier than that of the previous study owing to the superior sensitivity in detecting nanocrystals in an amorphous layer. The phase formation can be explained from the constructed metastable free-energy diagram.

机译：发现在（001）Si上退火的超高真空沉积Ti薄膜的非晶混合层中同时形成了许多纳米级Ti硅化物Ti_5Si_3，Ti_5Si_4和TiSi。自相关函数分析已应用于高分辨率透射电子显微镜图像，以识别反应初始阶段形成的相。由于在检测非晶层中的纳米晶体方面具有较高的灵敏度，因此发现中间硅化物相的形成要早于先前的研究。相的形成可以从所构建的亚稳态自由能图来解释。

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来源
《Journal of Applied Physics》 |2005年第3期|p.034302.1-034302.6|共6页
作者
T. H. Yang; K. S. Chi; L. J. Chen;
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作者单位

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;
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1. Structural and concentration heterogeneities during formation of silicide phases in the thin film System ti(5nm)/Ni(24nm)/Si(001) [J] . Sidorenko S.I., Voloshko S.M., Makogon Y.M., Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum . 2013,第Null期

机译：ti（5nm）/ Ni（24nm）/ Si（001）薄膜系统中硅化物相形成过程中的结构和浓度异质性
2. High-resolution electron microscopy studies on coherent plate precipitates and nanocrystals formed by low-temperature heat treatments of amorphous Ti-rich Ti-Ni thin films [J] . Kikuchi T., Kajiwara S., Matsunaga T., Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties . 1998,第2期

机译：非晶态富钛Ti-Ni薄膜的低温热处理形成的相干板析出物和纳米晶体的高分辨率电子显微镜研究
3. Growth of amorphous silicide during Ti/Si interfacial reactions in multilayer thin films [J] . E. Ma Materials Science and Engineering. A, Structural Materials . 2005,第1a2期

机译：多层薄膜中Ti / Si界面反应过程中非晶硅化物的生长
4. The influences of stress on the grwoth of Ti and Ni silicide thin films on (001)Si [C] . L.J.Chen, S.L.Cheng, H.M.Luo, International conference on solid-state and integrated circuit technology . 1998

机译：应力对（001）Si上Ti和Ni硅化物薄膜生长的影响
5. Mechanical properties of granular metal thin films and kinetics of silicide formation in chromium-amorphous silicon multilayered films [D] . Schlesinger, Todd Evan 1992

机译：铬非晶硅多层膜中颗粒金属薄膜的力学性能和硅化物形成的动力学
6. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer [O] . Aditya Prabaswara, Jung-Wook Min, Chao Zhao, 2018

机译：使用薄Ti夹层在非晶态石英上直接生长基于III族氮化物纳米线的黄色发光二极管
7. Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films [O] . -1

机译：氧气沉积压力在TiO2（001）锐钛矿薄膜中形成Ti缺陷态的作用
8. Formation and Properties of Titanium Disilicide: A Study on the Development ofStress in Ti-Si Thin Films (Vorming en Eigenschappen van Titanium Disilicide. Een Onderzoek naar Spanningsontwikkeling in Dunne Ti-Si Lagen) [R] . Jongste, J. F. 1994

机译：二硅化钛的形成和性质：Ti-si薄膜应力发展的研究（Vorming en Eigenschappen van Tianium Bisilicide.Een Onderzoek naar spanningsontwikkeling in Dunne Ti-si Lagen）

Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si

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