...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling
【24h】

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

机译：氮掺杂的切克劳斯基硅片中的氧沉淀。二。氮氧耦合的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Nitrogen segregation and coprecipitation with oxygen in N-doped Czochralski (N-CZ) silicon wafers are investigated as a function of depth based on extended defect structure and chemical composition. High resolution nitrogen and oxygen secondary ion mass spectroscopy imaging revealed strong coupling of oxygen with nitrogen in annealed as well as in "as-grown" N-CZ Si wafers. In both cases, the near-surface regions appeared highly supersaturated in N and O forming a continuum of defects initiated by N-O complexes. The N and O stoichiometry depth profiles were found to depend on the material thermal history. The spatial variation of the stoichiometry ratio was also determined for precipitates using a combination of scanning transmission electron microscope (STEM) in Z-contrast mode with electron energy loss spectroscopy. The precipitate atomic and microstructures, analyzed by high resolution TEM and STEM, clearly demonstrate that second phase precipitate is precursor to a third phase that is an outer oxynitride shell. Nitrogen and oxygen cosegregation from the matrix to the precipitate interface occurs in a similar fashion as in the subsurface region. We propose a mechanism for oxygen precipitation in N-CZ Si based on N segregation to the interface while oxygen is trapped inside the oxynitride shell. (C) 2004 American Institute of Physics.
机译：基于扩展的缺陷结构和化学成分，研究了氮掺杂的切克劳斯基（N-CZ）硅晶片中氮的偏析和与氧的共沉淀。高分辨率氮和氧二次离子质谱成像显示退火和“已生长”的N-CZ Si晶片中氧与氮之间的强耦合。在这两种情况下，N和O的近表面区域都高度饱和，形成由N-O络合物引发的连续缺陷。发现N和O化学计量深度分布取决于材料的热历史。还使用Z对比模式的扫描透射电子显微镜（STEM）与电子能量损失谱仪相结合，确定了沉淀物的化学计量比的空间变化。通过高分辨率TEM和STEM分析的沉淀物原子和微观结构清楚地表明，第二相沉淀物是作为外部氧氮化物壳的第三相的前体。从基质到沉淀物界面的氮和氧共偏析发生的方式与在地下区域类似。我们提出了一种基于N偏析到界面同时氧被困在氮氧化物壳内的N-CZ Si中氧析出的机制。 （C）2004美国物理研究所。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号