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首页> 外文期刊>Journal of Applied Physics >Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
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Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

机译：用于研究功率器件的AlGaN / GaN-HEMT异质结构中作为垂直泄漏源的螺纹位错的方法

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摘要

In this work, an AlGaN/GaN-HEMT heterostructure is exemplarily studied by a strict place-to-place correlational approach in order to help clarify some open questions in the wide field of reliability topics. Especially, vertical leakage current, its relation to dislocations in general, and specific types in particular are investigated on a highly defective material. With the aid of atomic force microscopy (AFM) in tapping mode, cathodoluminescence imaging, defect selective etching, and energy dispersive X-ray, the material's defect content around the device relevant two dimensional electron gas is analyzed. The total dislocation density, as well as the density of threading screw, edge, and mixed type dislocations, is systematically investigated directly. The obtained result is statistically much more significant than is possible by conventional transmission electron microscopy studies and more precise than the results obtained by the indirect method of rocking curve analysis. The method of conductive AFM allowed mapping of variations in the vertical leakage current, which could be correlated with variations in barrier leakage or gate leakage. Spots of locally high leakage current could be observed and directly assigned to dislocations with a screw component, but with significant differences even within the same group of dislocation types. The electrical activity of dislocations is discussed in general, and a fundamental model for a potential dislocation driven vertical leakage is proposed. (C) 2019 Author(s).
机译：在这项工作中，通过严格的位置对位置相关方法示例性地研究了AlGaN / GaN-HEMT异质结构，以帮助阐明可靠性主题这一广泛领域中的一些未解决的问题。尤其是，在高度缺陷的材料上研究了垂直泄漏电流，其与位错的关系，特别是特定类型。借助分接模式下的原子力显微镜（AFM），阴极发光成像，缺陷选择性蚀刻和能量色散X射线，可以分析器件相关二维电子气周围材料的缺陷含量。直接系统地研究了总位错密度以及螺纹螺钉，边缘和混合型位错的密度。与常规的透射电子显微镜研究相比，所获得的结果在统计上要有意义得多，并且比通过摇摆曲线分析的间接方法所获得的结果更为精确。导电原子力显微镜的方法允许映射垂直泄漏电流的变化，该变化可能与势垒泄漏或栅极泄漏的变化相关。可以观察到局部高泄漏电流的点，并直接用螺钉组件将其分配给位错，但即使在同一组位错类型中也存在显着差异。一般讨论了位错的电活动，并提出了由位错驱动的垂直泄漏的基本模型。 （C）2019作者。

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  • 来源
    《Journal of Applied Physics》 |2019年第9期|095704.1-095704.8|共8页
  • 作者

    Besendoerfer S.; Meissner E.; Lesnik A.; Friedrich J.; Dadgar A.; Erlbacher T.;

  • 作者单位

    Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany;

    Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany;

    Otto von Guericke Univ, Inst Expt Phys, Univ Pl 2, D-39106 Magdeburg, Germany;

    Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany;

    Otto von Guericke Univ, Inst Expt Phys, Univ Pl 2, D-39106 Magdeburg, Germany;

    Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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