...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation
【24h】

Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation

机译：提取石墨烯的内在场效应迁移率考虑栅极偏压诱导的接触调制的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Carrier mobility is one of the most important parameters to evaluate the quality and uniformity of graphene. The mobility of graphene is typically extracted from the transconductance of a field-effect transistor fabricated with the graphene layer. However, the mobility value evaluated by this method is imprecise when the contact resistance is non-negligible, or the contact resistance is modulated by the gate bias, which is the case for typical graphene field-effect transistors. Here, we suggest a method for extracting the precise intrinsic field-effect mobility by considering the effective bias across the channel and its gate-induced modulation. We show that the contact resistances of typical graphene field-effect transistors are significantly modulated by gate bias and conventional methods can, therefore, cause a considerable error in the evaluation of the mobility. The proposed method in which the contact-induced error is removed gives a channel-length-independent intrinsic field-effect mobility. This method can be generally used to correctly evaluate the field-effect mobility of nano-scale or low-dimensional materials.
机译：载波移动性是评估石墨烯的质量和均匀性最重要的参数之一。石墨烯的迁移率通常从用石墨烯层制造的场效应晶体管的跨导。然而，当接触电阻不可忽略的情况下，通过该方法评估的移动性值是不精确的，或者通过栅极偏压调制接触电阻，这是典型的石墨烯场效应晶体管的情况。这里，我们建议通过考虑频道的有效偏压及其栅极感应调制来提示一种提取精确的内在场效应移动性的方法。我们表明，典型的石墨烯场效应晶体管的接触电阻通过栅极偏压显着调制，因此可以在迁移率的评估中引起相当大的误差。去除接触误差的所提出的方法给出了频道长度无关的内在场效应迁移率。该方法通常用于正确评估纳米级或低维材料的场效应迁移率。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第18期|185105.1-185105.9|共9页
  • 作者

    Chang-Ju Lee; Honghwi Park; Jaewoon Kang; Junyeong Lee; Muhan Choi; Hongsik Park;

  • 作者单位

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

    School of Electronics Engineering Kyungpook National University Daegu 41566 South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号