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Frequency dependence of the capacitive excitation of plasma: An experimental proof

机译:等离子体电容激发的频率依赖性:实验证明

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摘要

Today, most of the microwave plasma sources are driven at 2.45 GHz. Meanwhile, GaN technology offers high-power components working efficiently at higher frequencies. Therefore, the perspective of plasma excitation at increased frequencies has to be investigated. The present work compares two plasma sources fabricated in the same way, having the same size discharge zone, however, different lengths in order to resonate at 2.45 GHz and 5.8 GHz, respectively. We conclude that, at the higher frequency, for the same absorbed microwave power, the electron density is almost two times higher. This evidence comes from microwave impedance analysis, optical emission intensities, and current voltage measurement on the effluent plasma jet.
机译:如今,大多数微波等离子体源都以2.45 GHz驱动。同时,GaN技术在较高频率下提供高功率分量。因此,必须研究增加增加频率的等离子体激发的视角。本作工作比较了以相同的方式制造的两个等离子体源,然而,具有相同的尺寸放电区,然而,分别以2.45GHz和5.8GHz共鸣。我们得出结论,在较高的频率下,对于相同的吸收的微波功率,电子密度几乎越高。该证据来自污水等离子体喷射器上的微波阻抗分析,光学发射强度和电流电压测量。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|183301.1-183301.9|共9页
  • 作者单位

    Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik 12489 Berlin Germany;

    Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik 12489 Berlin Germany;

    Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik 12489 Berlin Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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