Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

L. Diallo; A. Fnidiki; L. Lechevallier; J. Juraszek; M. Viret; M. Marteau; D. Eyidi; A. Declemy

首页> 外文期刊>Journal of Applied Physics >Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

【24h】

Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

机译：Fe植入的4H-SiC半导体磁性的起源

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

p-doped 4H-SiC substrates were implanted with ~(57)Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in the semiconducting SiC material. Using ~(57)Fe Conversion Electron Moessbauer Spectrometry and Superconducting Quantum Interference Device magnetometry, we give evidence that the ferromagnetism obtained in SiC implanted with a ~(57)Fe atoms concentration close to 2% is not only due to the formation of some Fe-Si magnetic nanoparticles but also originates from magnetic Fe atoms diluted in the matrix of the semiconductor. So, values of Fe atoms magnetizations contained in nanoparticles and Fe atoms diluted in the matrix and the Curie temperatures associated with the nanoparticles and to the matrix have been determined.

机译：将P掺杂的4H-SiC衬底植入〜（57）的电荷离子，其能量范围为30-160keV，并进行快速热退火，以在半导体SiC中产生100nm厚区域内的均匀Fe浓度材料。使用〜（57）Fe转换电子Moessbauer光谱法和超导量子干涉装置磁力测量，旨在证明在植入的SiC中获得的铁磁性接近2％的〜2％不仅是由于某些Fe的形成-SI磁性纳米颗粒，但也来自半导体基质中稀释的磁性Fe原子。因此，已经确定了在基质中稀释的纳米颗粒和稀释与纳米颗粒相关的居里温度和与基质相关的纳米颗粒和Fe原子的Fe原子磁化的值。

著录项

来源
《Journal of Applied Physics》 |2020年第18期|183901.1-183901.6|共6页
作者
L. Diallo; A. Fnidiki; L. Lechevallier; J. Juraszek; M. Viret; M. Marteau; D. Eyidi; A. Declemy;
展开▼
作者单位

Normandie University UNIROUEN INSA Rouen CNRS GPM 76000 Rouen France;

Normandie University UNIROUEN INSA Rouen CNRS GPM 76000 Rouen France;

Normandie University UNIROUEN INSA Rouen CNRS GPM 76000 Rouen France Departement de GEM Universite de Cergy-Pontoise rue d'Eragny Neuville sur Oise 95031 Cergy-Pontoise France;

Normandie University UNIROUEN INSA Rouen CNRS GPM 76000 Rouen France;

Service de Physique de l'Etat Condense (DSM/IRAMIS/SPEC) UMR 3680 CNRS Bat. 772 Orme des Merisiers CEA Saclay 91191 Gif sur Yvette France;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC [J] . Zhang Leifeng, Diallo Lindor, Fnidiki Abdeslem, Scripta materialia . 2020,第1期

机译：探测磁力的起源在2at％Fe-incormanted 4h-sic中
2. Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-Axis Substrates [J] . Yoshihiro Ueoka, Kenta Shingu, Hiroshi Yano, Japanese journal of applied physics . 2012,第11Issue1期

机译：轴外衬底上4H-SiC沟道金属氧化物半导体场效应晶体管的各向异性电学性质的起源
3. On the understanding of the microscopic origin of the properties of diluted magnetic semiconductors by atom probe tomography [J] . R.K. Zheng, M.P. Moody, B. Gault, Journal of magnetism and magnetic materials . 2009,第8期

机译：通过原子探针层析成像技术了解稀磁半导体特性的微观起源
4. Magnetic Properties of Mn and Fe-Implanted p-GaN [C] . N. THEODOROPOULOU, M. E. OVERBERG, S. N. G. CHU, Fourth International Conference on Nitride Semiconductors . 2002

机译：Mn和Fe注入的p-GaN的磁性
5. Magnetic and Transport Properties of Colossal Magnetoresistance Manganites and Magnetic Semiconductors [D] . Wanjun, Jiang 2010

机译：巨大磁阻锰矿和磁性半导体的磁性和输运性质
6. Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO2 Magnetic Semiconductors [O] . Junpeng Fan, Enric Menéndez, Miguel Guerrero, 2017

机译：揭示中孔掺杂铜的SnO2磁性半导体中的磁性起源
7. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides [O] . Tomasz Dietl 2007

机译：稀磁半导体和氧化物中铁磁响应的起源

Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

摘要

著录项

相似文献

相关主题

期刊订阅