Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices

Yang Cao; Brandon Dzuba; Brenden A. Magill; Alexander Senichev; Trang Nguyen; Rosa E. Diaz; Michael J. Manfra; Stephen McGill; Carlos Garcia; Giti A. Khodaparast; Oana Malis

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Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices

机译：非极性M平面Ingan的光致发光研究与近菌均衡Ingan / Algan超晶格

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Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In_(0.09)Ga_(0.91)N/Al_(0.19)Ga_(0.81)N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice.

机译：非极性M面IngaN薄膜的光致发光（PL）光谱，铟组分高达21％，几乎应变 - 平衡IN_（0.09）GA_（0.91）N / AL_（0.19）GA_（0.81）N超大格子通过等离子体辅助生长作为温度的函数进行分子束外延。实验过渡能量始终低于基于从X射线衍射测量提取的结构参数的计算。这表明IngaN中的铟组成波动的存在，因此局部带隙还原产生充电定位中心。我们的M面Ingan / AlGaN超晶格的低温PL的光谱宽度比以前报道的MOCVD生长的M平面Ingan / GaN量子孔更窄。但是PL集成强度迅速下降，因为温度增加到300 k，表示室温下的强辐射重组。在低温下进行时间分辨的PL，以表征在未掺杂的和掺杂的超晶格中的松弛时间尺度。

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《Journal of Applied Physics》 |2020年第18期|185702.1-185702.9|共9页
作者
Yang Cao; Brandon Dzuba; Brenden A. Magill; Alexander Senichev; Trang Nguyen; Rosa E. Diaz; Michael J. Manfra; Stephen McGill; Carlos Garcia; Giti A. Khodaparast; Oana Malis;
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作者单位

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA;

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA Birck Nanotechnology Center West Lafayette Indiana 47907 USA;

Department of Physics Virginia Tech Blacksburg Virginia 24061 USA;

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA Birck Nanotechnology Center West Lafayette Indiana 47907 USA;

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA;

Birck Nanotechnology Center West Lafayette Indiana 47907 USA;

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA Birck Nanotechnology Center West Lafayette Indiana 47907 USA School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA School of Materials Engineering Purdue University West Lafayette Indiana 47907 USA;

National High Magnetic Field Laboratory Tallahassee Florida 32310 USA;

National High Magnetic Field Laboratory Tallahassee Florida 32310 USA;

Department of Physics Virginia Tech Blacksburg Virginia 24061 USA;

Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Optical studies of non-polar m-plane (1(1)over-bar00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN [J] . Sutherland Danny, Zhu Tongtong, Griffiths James T., Physica status solidi, B. Basic research . 2015,第5期

机译：在独立的本体GaN上生长的非极性m平面（1（1）over-bar00）InGaN / GaN多量子阱的光学研究
2. Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes [J] . Ximeng Chen, Huaimin Gu, Xiaolin Chen Optical engineering . 2018,第10期

机译：双AlGaN / InGaN超晶格电子阻挡层改善了InGaN / GaN发光二极管的性能
3. Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure [J] . Rabia Saroosh, Tauseef Tauqeer, Sara Afzal, Optoelectronics, IET . 2017,第4期

机译：具有GaN / InGaN超晶格结构的AlGaN / InGaN MQW LED的性能增强
4. Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO_2 (001) substrates [C] . R. Zhang, rnZ.L. Xie, rnB. Liu, Gallium nitride materials and devices V . 2010

机译：在LiAlO_2（001）衬底上生长的非极性m面GaN膜和极化的InGaN / GaN LED
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

机译：在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
7. Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells [O] . Schulz, Stefan, Tanner, Daniel S. P., O'Reilly, Eoin P., 2017

机译：m面InGaN / GaN量子阱的光致发光和光致发光激发光谱的理论和实验分析

Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices

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