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Orientation dependence of dielectric and piezoelectric properties of tetragonal relaxor ferroelectric single crystals by alternate current poling

机译:交替电流抛光通过四边形松弛器铁电单晶电介质和压电性能的取向依赖性

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摘要

Piezoelectric and dielectric properties of [001] and [110]-oriented tetragonal Pb(In_(1/2)Nb_(1/2))-Pb(Mg_(1/3)Nb_(2/3))-PbTiO_3 (PIN-PMN-PT) single crystals (SCs) after alternate current poling (ACP) were investigated. Compared with direct current poling (DCP), the piezoelectric and dielectric properties of [001]-oriented samples have no improvement, while the piezoelectric coefficient d_(33) and free dielectric constant ε_(33)~T/ε_0 of [110]-oriented samples increase by 32% and 26%, respectively. The domain was observed on (001) and (110) faces of [110]-ori-ented samples. The enhancement of the piezoelectric performance is attributed to the high density of domain wall, increase of distorted regions between 90° domains, and monoclinic phase. Compared with DCP, both intrinsic and extrinsic contributions enhance after ACP though the Rayleigh analysis. This work indicates that ACP is an effective way to enhance piezoelectric properties of non-polar axis oriented relaxor-PT ferroelectric SCs.
机译:[001]的压电和介电性质和[110] - oriented四字节Pb(In_(1/2)Nb_(1/2)) - Pb(Mg_(1/3)Nb_(2/3)) - pbtio_3(引脚研究了替代电流抛光(ACP)后的单晶(SCS)。与直流抛光(DCP)相比,[001]的压电和介电性质对样品没有改进,而压电系数D_(33)和[110]的游离介电常数ε_(33)〜T /ε_0 - 定向样品分别增加了32%和26%。在[110] -ORI-EXTED样本的(001)和(110)面上观察到该结构域。压电性能的增强归因于畴壁的高密度,在90°域之间的扭曲区域增加,单晶相。与DCP相比,在ACP虽然瑞利分析虽然在ACP之后增强了内在和外在贡献。这项工作表明,ACP是增强非极性轴取向松弛器-PT铁电SCS的压电性能的有效方法。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第18期|184104.1-184104.8|共8页
  • 作者单位

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China College of Chemistry and Materials Science Fujian Normal University Fuzhou 350117 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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