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首页> 外文期刊>Journal of Applied Physics >Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
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Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

机译：氢封端的金刚石场效应晶体管中的电荷载流子迁移率

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摘要

Diamond fleld-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm~2 V~(-1) s~(-1). In this study, we identify the scattering mechanism that limits the mobility of our FETs through theoretical calculations. Our calculations reveal that dominant carrier scattering is caused by surface charged impurities with a density of ≈ 1 × 10~(12) cm~(-2) and suggest that an increase in mobility over is possible by reducing these impurities.
机译：金刚石型效应晶体管（FET）在电力电子和高输出高频放大中具有潜在的应用。在这种应用中，希望降低损耗和高速操作，希望高电荷载流子迁移率。我们最近用六边形 - 氮化物栅极电介质制造金刚石FET，并观察到300cm〜2V〜（-1）〜（-1）以上的高迁移率。在这项研究中，我们识别通过理论计算限制我们FET的移动性的散射机制。我们的计算揭示了主导载体散射是由表面带电杂质引起的，该杂质密度为≈1×10〜（12）cm〜（-2），并表明通过减少这些杂质可以增加迁移率。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|185707.1-185707.8|共8页
  • 作者

    Yosuke Sasama; Taisuke Kageura; Katsuyoshi Komatsu; Satoshi Moriyama; Jun-ichi Inoue; Masataka Imura; Kenji Watanabe; Takashi Taniguchi; Takashi Uchihashi; Yamaguchi Takahide;

  • 作者单位

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba 305-8571 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan;

    Research Center for Functional Materials National Institute for Materials Science Tsukuba 305-0044 Japan;

    Research Center for Functional Materials National Institute for Materials Science Tsukuba 305-0044 Japan;

    Research Center for Functional Materials National Institute for Materials Science Tsukuba 305-0044 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan;

    International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba 305-8571 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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