...
首页> 外文期刊>Journal of Applied Physics >High-acoustic-index-contrast phononic circuits: Numerical modeling
【24h】

High-acoustic-index-contrast phononic circuits: Numerical modeling

机译:高声学指数 - 对比声电源:数值建模

获取原文
获取原文并翻译 | 示例
           

摘要

We numerically model key building blocks of a phononic integrated circuit that enable phonon routing in high-acoustic-index waveguides. Our particular focus is on the gallium nitride-on-sapphire phononic platform which has recently demonstrated high acoustic confinement in its top layer without the use of suspended structures. We start with the systematic simulation of various transverse phonon modes supported in strip waveguides and ring resonators with sub-wavelength cross section. Mode confinement and quality factors of phonon modes are numerically investigated with respect to geometric parameters. A quality factor of up to 108 is predicted in optimized ring resonators. Next, we study the design of the phononic directional couplers and present key design parameters for achieving strong evanescent couplings between modes propagating in parallel waveguides. Last, interdigitated transducer electrodes are included in the simulation for direct excitation of a ring resonator and critical coupling between microwave input and phononic dissipation. Our work provides a comprehensive numerical characterization of phonon modes and functional phononic components in high-acoustic-index phononic circuits, which supplements previous theories and contributes to the emerging field of phononic integrated circuits.
机译:我们的数字式模型键构件块的声波集成电路,使位于高声学索引波导中的声子路由。我们的特殊重点是在氮化镓上的氮化镓上,最近在其顶层中展示了高声学限制而不使用悬浮结构。我们从带有亚波长横截面的条带波导和环谐振器中支撑的各种横孔模式的系统模拟开始。对几何参数进行数值研究了声子模式的模式限制和质量因素。在优化环谐振器中预测了高达108的质量因子。接下来,我们研究声子方向耦合器的设计,并提供了在并行波导中传播的模式之间实现强的渐致耦合的临界设计参数。最后,在微波输入和音声耗散之间的直接激发环谐振器和临界耦合的模拟中,包括在模拟中。我们的工作提供了高声波索引电流电路中的声子模式和功能声子组件的综合数字表征,其补充了先前的理论并有助于发夹集成电路的新兴领域。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第18期|184503.1-184503.18|共18页
  • 作者单位

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA Depratment of Optics University of Science and Technology of China CAS Hefei Anhui 230026 China Department of Physics University of Maryland College Park Maryland 20742 USA;

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA Depratment of Optics University of Science and Technology of China CAS Hefei Anhui 230026 China;

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA Depratment of Optics University of Science and Technology of China CAS Hefei Anhui 230026 China;

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA;

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA Depratment of Optics University of Science and Technology of China CAS Hefei Anhui 230026 China;

    Department of Electrical Engineering Yale University New Haven Connecticut 06511 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号