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Non-specular scattering of carriers from surface defects in thin metal interconnects

机译：从薄金属互连的表面缺陷的载体的非镜面散射

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摘要

Non-specular scattering of carriers, despite being one of the key contributors to metal film resistivity, is conveniently characterized by a single parameter p (referred to as specularity parameter) in the literature without providing a means to separate out relative contributions of surface defects to it. In this work, we report a theoretical formalism to predict contributions to (non-specular) reflection (scattering) of carriers from different types of chemical and structural defects on the film surface. Establishing specular reflection as a special case of the more generalized reflection from the surface, we show that elastic scatterings contribute to the non-specular reflections by randomizing the forward momentum along the transport direction. We predict density and angle-dependent specularity coefficient for various types of defects and show that large angle reflections tend to be non-specular in the presence of isotropic surface defects. Using this formalism, we predict the probability of specular reflection for technologically relevant metal-metal and metal-insulator interfaces. Calculated specularity coefficients are in agreement with values obtained from experimental measurements. Our methodology will help in designing next generation interconnects and engineering the interfaces with minimal diffuse reflection.
机译：尽管是金属薄膜电阻率的关键贡献者之一，但是在文献中的单个参数P（称为镜面参数）的关键贡献者之一，不提供分离表面缺陷的相对贡献它。在这项工作中，我们报告了理论形式主义，以预测来自不同类型的化学和结构缺陷的载体的（非镜面）反射（散射）的贡献。建立镜面反射作为从表面上更广泛反射的特殊情况，我们表明弹性散射通过随机化沿着运输方向随机化前向动量有助于非镜面反射。我们预测各种类型的缺陷的密度和角度依赖性镜面系数，并且表明大角度反射在各向同性表面缺陷存在下倾向于是非镜面。使用这种形式主义，我们预测技术相关金属 - 金属和金属 - 绝缘体界面镜面反射的概率。计算的镜面系数与从实验测量获得的值一致。我们的方法将有助于设计下一代互连和用最小漫反射的接口。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|185103.1-185103.17|共17页
  • 作者

    Aniruddha Konar; Prashant P. Shinde; Shanthi Pandian; Shashishekar P. Adiga; K. Subramanya Mayya; Yeonchoo Cho; Hyeon-Jin Shin; Seongjun Park;

  • 作者单位

    Device Materials Simulations (SAIT-India) Samsung Research Institute Bangalore 560037 India;

    Device Materials Simulations (SAIT-India) Samsung Research Institute Bangalore 560037 India;

    Device Materials Simulations (SAIT-India) Samsung Research Institute Bangalore 560037 India;

    Device Materials Simulations (SAIT-India) Samsung Research Institute Bangalore 560037 India;

    Device Materials Simulations (SAIT-India) Samsung Research Institute Bangalore 560037 India;

    lnorganic Materials Laboratory Samsung Advanced Institute of Technology Suwon 433-803 Republic of Korea;

    lnorganic Materials Laboratory Samsung Advanced Institute of Technology Suwon 433-803 Republic of Korea;

    lnorganic Materials Laboratory Samsung Advanced Institute of Technology Suwon 433-803 Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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