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首页> 外文期刊>Journal of Applied Physics >Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

机译：内在和外在状态的相互作用在GaN N-P-N结的M平面谱中的固定与钝化

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摘要

Intrinsic and extrinsic pinning and passivation of m-plane cleavage facets of GaN n-p-n junctions were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. On freshly cleaved and clean p-type GaN(1010) surfaces, the Fermi level is found to be extrinsically pinned by defect states, whereas n-type surfaces are intrinsically pinned by the empty surface state. For both types of doping, air exposure reduces the density of pinning states and shifts the pinning levels toward the band edges. These effects are assigned to water adsorption and dissociation, passivating intrinsic and extrinsic gap states. The revealed delicate interplay of intrinsic and extrinsic surface states at GaN(1010) surfaces is a critical factor for realizing flatband conditions at sidewall facets of nanowires exhibiting complex doping structures.
机译：通过横截面扫描隧道显微镜和光谱研究了GaN N-P-N结的M平面切割小平面的内在和外在钉扎和钝化。在新近地裂解和清洁P型GaN（1010）表面上，发现FERMI水平被缺陷状态外在固定，而n型表面本质上由空表面状态固定。对于这两种类型的掺杂，空气曝光降低了钉扎状态的密度，并将钉纳水平朝向带边的密度转移。这些效果被分配给水吸附和解离，钝化内在和外部间隙状态。在GaN（1010）表面处的内在和外部表面状态的揭示细腻的相互作用是实现纳米线的侧壁刻面的侧壁条件的关键因素，其纳米线呈现复合掺杂结构。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|185701.1-185701.8|共8页
  • 作者

    L. Freter; Y. Wang; M.Schnedler; J.-F. Carlin; J R. Butte; N. Grandjean; H. Eisele; R. E. Dunin-Borkowski; Ph. Ebert;

  • 作者单位

    Peter Grunberg Institut Forschungszentrum Julich GmbH 52425 Julich Germany Lehrstuhl fur Experimentalphysik IV E RWTH Aachen University 52056 Aachen Germany;

    Peter Grunberg Institut Forschungszentrum Julich GmbH 52425 Julich Germany Lehrstuhl fur Experimentalphysik IV E RWTH Aachen University 52056 Aachen Germany;

    Peter Grunberg Institut Forschungszentrum Julich GmbH 52425 Julich Germany;

    Institute of Physics Ecole Polytechnique Federale de Lausanne (EPFL) 1015 Lausanne Switzerland;

    Institute of Physics Ecole Polytechnique Federale de Lausanne (EPFL) 1015 Lausanne Switzerland;

    Institute of Physics Ecole Polytechnique Federale de Lausanne (EPFL) 1015 Lausanne Switzerland;

    Technische Universitat Berlin Institut fur Festkorperphysik Hardenbergstr. 36 10623 Berlin Germany;

    Peter Grunberg Institut Forschungszentrum Julich GmbH 52425 Julich Germany Ernst Ruska-Centrum Forschungszentrum Julich GmbH 52425 Julich Germany;

    Peter Grunberg Institut Forschungszentrum Julich GmbH 52425 Julich Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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