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首页> 外文期刊>Journal of Applied Physics >Realization of tunable artificial synapse through ambipolar charge trapping in organic transistor with pentacene/poly(α-methylstyrene) architecture
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Realization of tunable artificial synapse through ambipolar charge trapping in organic transistor with pentacene/poly(α-methylstyrene) architecture

机译：用五烯/聚（α-甲基苯乙烯）架构有机晶体管捕获可调谐人工突触

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摘要

Transistor-based artificial synapses are expected to tackle the inherent limitations of traditional von Neumann architecture for neuromorphic computing paradigm. Organic electronic materials are promising components of future neuromorphic systems, but mimicking the functions of biological synapses for symmetric weight update and desired variation margin still remains challenging. Here, we propose a synaptic transistor based on pentacene/poly(α-methylstyrene) (PαMS) architecture capable of exhibiting the main behavior of a biological spiking synapse. The ambipolar charge trapping of the transistor enables symmetric variation of the channel conductivity with desirable margin. Comprehensive synaptic functions, including the postsynaptic current with different pulse amplitudes, short-term to long-term plasticity transition, reversible channel conductance potentiation and depression, and repetitive and symmetrical learning processes, are emulated. The realization of essential synaptic functions based on the cumulative charge trapping of pentacene/PαMS structure provides a feasible device structure toward the future demand of neuromorphic computing.
机译：基于晶体管的人工突触预计将解决传统冯Neumann架构的神经形态计算范例的固有局限性。有机电子材料是未来神经形式系统的有前途的组成部分，但模仿对称权重更新的生物突触的功能，所需的变化余量仍然持挑战性。在这里，我们提出了一种基于五苯丙烯/聚（α-甲基苯乙烯）（PαMS）架构的突触晶体管，其能够表现出生物尖刺突触的主要行为。晶体管的Ambipolar电荷捕获使得通道导电性的对称变化具有理想的余量。综合突触函数，包括具有不同脉冲幅度的突触电流，短期到长期可塑性转换，可逆通道导电级化和抑郁以及重复和对称的学习过程。基于五价/Pαms结构的累积电荷俘获的基本突触函数的实现为未来神经形态计算的需求提供了可行的装置结构。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|074903.1-074903.7|共7页
  • 作者

    Yushan Li; Ruiqiang Tao; Waner He; Cheng Chang; Zhengmiao Zou; Yan Zhang; Dao Wang; Jiali Wang; Zhen Fan; Guofu Zhou; Xubing Lu; Dimming Liu;

  • 作者单位

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China National Center for International Research on Green Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing University Nanjing 21009 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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