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首页> 外文期刊>Journal of Applied Physics >Role of strain and composition on the piezoelectric and dielectric response of Al_xCa_(1-x)N: Implications for power electronics device reliability
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Role of strain and composition on the piezoelectric and dielectric response of Al_xCa_(1-x)N: Implications for power electronics device reliability

机译：应变和组成对AL_XCA_（1-X）N的压电和介电响应的作用：电力电子设备可靠性的影响

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摘要

Gallium nitride (GaN) and Al_xGa_(1-x)N, its solid solution with Al, play a vital role in a variety of high-power applications owing to their high breakdown voltage, drift velocity, and sheet charge density. Their piezoelectric nature is critical for both the operation and reliability of GaN-based devices, and this is compounded by the lack of lattice-matched substrates and the lattice mismatch between GaN and Al_xGa_(1-x)N, which invariably results in strained films. Thus, accurate models of performance and reliability require knowledge of how strain affects dielectric and piezoelectric response. We used density functional theory to calculate the piezoelectric and dielectric constants for different compositions of Al_xGa_(1-x)N as a function of biaxial strain and use Gaussian process regression to develop models, including uncertainties, from the ab initio results. We find that the dielectric constants decrease with compressive biaxial strain and increasing Al content due to an increase in phonon frequencies. Meanwhile, the piezoelectric constants increase with compressive biaxial strain and with Al doping. Our results show that the presence of strain can explain discrepancies in experimental measurements of dielectric constants but not piezoelectric ones. Interestingly, the piezoelectric constants e_(33) and e_(31) (which control the elastic energy induced by the application of gate voltage in GaN high electron mobility transistors, which have been related to their degradation) vary by almost 100% within a biaxial strain range of ~3%. These results indicate that incorporating strain-dependent and composition-dependent piezoelectric response into current degradation models based on inverse piezoelectricity is crucial for accurate reliability predictions in GaN-based transistors.
机译：氮化镓（GaN）和Al_xga_（1-x）N，其具有Al的固溶体，由于其高击穿电压，漂移速度和纸张电荷密度而在各种大功率应用中起着至关重要的作用。它们的压电性质对于GaN的装置的操作和可靠性至关重要，这通过缺少晶格匹配的基材和GaN和Al_xga_（1-x）n之间的晶格失配，这意味着导致紧张薄膜。因此，准确的性能和可靠性模型需要了解应变如何影响电介质和压电响应。我们使用密度泛函理论以计算AL_XGA_（1-X）N的不同组成的压电和介电常数作为双轴应变的函数，并使用高斯过程回归从AB Initio结果开发模型，包括不确定性。我们发现介电常数随压缩双轴菌株而降低，并且由于声子频率的增加而增加Al含量。同时，压电常数随压缩双轴菌株和Al掺杂而增加。我们的研究结果表明，应变的存在可以解释介电常数但不是压电常数的实验测量值的差异。有趣的是，压电常数E_（33）和E_（31）（控制通过在GaN高电子迁移率晶体管中应用栅极电压引起的弹性能，这与其降解有关的栅极电压）在双轴内变化几乎100％应变范围〜3％。这些结果表明，基于逆压电基的电流劣化模型中，这些结果表明基于逆压电的电流劣化模型将依赖性和组成相关的压电响应在基于GaN的晶体管中的精确可靠性预测中来说至关重要。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|075701.1-075701.9|共9页
  • 作者

    Saswat Mishra; Kathik Guda Vishnu; Alejandro Strachan;

  • 作者单位

    School of Materials Engineering and Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA;

    School of Materials Engineering and Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA;

    School of Materials Engineering and Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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