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首页> 外文期刊>Journal of Applied Physics >Antimony chalcogenide-based thin film solar cells: Device engineering routes to boost the performance
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Antimony chalcogenide-based thin film solar cells: Device engineering routes to boost the performance

机译：基于锑的硫属化物的薄膜太阳能电池：设备工程路线提高性能

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摘要

The use of stibnite (Sb_2S_3) as a light-harvesting material in thin film solar cells has received considerable research interest during the transition of the millennium. However, the use of perovskite diminished the research in the field, and the potential of antimony Chalcogenides [Sb_2(S,Se)_3] was not explored thoroughly. Although these materials also provide bandgap tuning like perovskite, by varying the composition of S and Se, it is not as popular as perovskite for the fabrication of solar cells mainly because of the low efficiency of the solar cells based on it. In this paper, we present a landscape of the functional role of various device parameters on the performance of Sb_2(S,Se)_3-based solar cells. For this purpose, we first calibrate the optoelectronic model used for simulation with the experimental results from the literature. The model is then subjected to parametric variations to explore the performance metrics for this class of solar cells. Our results show that despite the belief that the open circuit voltage is independent of contact layers' doping in proper band-aligned carrier selective thin film solar cells, here we observe otherwise and the open circuit voltage is indeed dependent on the doping density of the contact layers. Using the detailed numerical simulation and analytical model, we further identify the performance optimization route for Sb_2(S,Se)_3-based thin film solar cells.
机译：使用辉锑矿（Sb_2S_3）作为薄膜太阳能电池的光收集材料千年的转换期间已经接收到大量的研究兴趣。然而，使用钙钛矿的减少在该领域的研究，锑硫族化物[SB_2（S，SE）_3]的潜力并没有深入探讨。虽然这些材料还提供带隙调谐等的钙钛矿，通过改变S和Se的组合物，它并不像流行作为钙钛矿用于太阳能电池，主要是因为基于它的太阳能电池的效率低的制造。在本文中，我们提出了各种设备参数对SB_2（S，Se）的性能的功能性作用的景观_3系太阳能电池。为此，我们首先校准用于模拟与文献实验结果光电模型。然后，将模型进行的参数变化来探索性能度量此类太阳能电池。我们的结果显示，尽管相信，开路电压是独立接触层在合适的频带对齐载流子选择性的薄膜太阳能电池的掺杂的，在这里我们否则观察和开路电压确实依赖于接触的掺杂密度层。使用详述的数值模拟和分析模型，我们进一步确定SB_2（S，Se）的性能优化路线_3系薄膜太阳能电池。

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  • 来源
    《Journal of Applied Physics》 |2021年第20期|203101.1-203101.7|共7页
  • 作者

    Sumanshu Agarwal; Vikas Nandal; Harekrishna Yadav; Kundan Kumar;

  • 作者单位

    Department of Electronics and Communication Engineering Institute of Technical Education and Research Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;

    Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi Tsukuba Ibaraki 305-8565 Japan;

    Department of Mechanical Engineering Indian Institute of Technology Indore Indore Madhya Pradesh 453552 India;

    Department of Electronics and Communication Engineering Institute of Technical Education and Research Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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